Jong Dae Yoon

US Patent:

7514331, Apr 7, 2009

Filed:

Jun 8, 2006

Appl. No.:

11/422952

Inventors:

Jong Shik Yoon - San Diego CA, US
Amitava Chatterjee - Plano TX, US
Haowen Bu - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/336

US Classification:

438303, 257E21626, 257E2164

Abstract:

A method of manufacturing a semiconductor device comprising removing a first oxide layer deposited over a semiconductor substrate, thereby exposing source and drain regions of the substrate. The first oxide layer is configured as an etch-stop for forming silicon nitride sidewall spacers of a gate structure located adjacent to the source and drain regions. The method further comprises depositing a second oxide layer selectively on the exposed source and drain regions and then removing lateral segments of the silicon nitride sidewall spacers.

US Patent:

7795085, Sep 14, 2010

Filed:

Jun 12, 2006

Appl. No.:

11/451264

Inventors:

Jong Shik Yoon - San Diego CA, US
Amitava Chatterjee - Plano TX, US
Kayvan Sadra - Addison TX, US
Shaoping Tang - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/8238

US Classification:

438199, 438527, 257E21346, 257E21633

Abstract:

Methods are disclosed for forming an SRAM cell having symmetrically implanted active regions and reduced cross-diffusion therein. One method comprises patterning a resist layer overlying a semiconductor substrate to form resist structures about symmetrically located on opposite sides of active regions of the cell, implanting one or more dopant species using a first implant using the resist structures as an implant mask, rotating the semiconductor substrate relative to the first implant by about 180 degrees, and implanting one or more dopant species into the semiconductor substrate with a second implant using the resist structures as an implant mask. A method of performing a symmetric angle implant is also disclosed to provide reduced cross-diffusion within the cell, comprising patterning equally spaced resist structures on opposite sides of the active regions of the cell to equally shadow laterally opposed first and second angled implants.

US Patent:

45497931, Oct 29, 1985

Filed:

Feb 19, 1985

Appl. No.:

6/702832

Inventors:

Jong B. Yoon - Falls Church VA

International Classification:

G02C 302

US Classification:

351156

Abstract:

Disclosed is a head-band holder having a head band for encircling horizontally the head of the wearer and holder assemblies that are adjustably positionable along the longitudinal axes of the bows. The head band and holder assemblies have cooperating self-engaging VELCRO pads so that the holder assemblies are positionable both laterally and vertically relative to the head band. These described adjustment features of the holder assemblies relative to the bows and relative to the head band provide for adjustable mounting and proper positioning of the eyeglasses on the head of the wearer so that the lenses are properly spaced or located relative to the wearer's eyes, so that the nose bridge does not drag down on the wearer's nose, so that the rims do not push against the perimeters of the wearer's eye sockets and so that the bows are in substantial balance vis-a-vis the rims, lenses and nose bridge.