Joost J Vlassak

age ~59

from Palo Alto, CA

Also known as:
  • Johan Maria Vlassak
  • Johan Maria Joost
  • Johan Vlassak Joost
  • Goost Vlassa
  • Maria Johan Joost
  • Joost Maria K
  • J K
  • Vlassak Joost
Phone and address:
2280 Hanover St, Palo Alto, CA 94306
6508562357

Joost Vlassak Phones & Addresses

  • 2280 Hanover St, Palo Alto, CA 94306 • 6508562357 • 6508562725 • 6508563351
  • 11 Flintlock Rd, Lexington, MA 02420
  • 14 Spruce St, Watertown, MA 02472 • 6179245380 • 6179245886
  • Sioux Falls, SD
  • Menlo Park, CA

Us Patents

  • Method To Measure The Elastic Modulus And Hardness Of Thin Film On Substrate By Nanoindentation

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  • US Patent:
    8265884, Sep 11, 2012
  • Filed:
    Jul 21, 2009
  • Appl. No.:
    12/506648
  • Inventors:
    Han Li - Cambridge MA, US
    Joost Vlassak - Lexington MA, US
  • Assignee:
    President and Fellows of Harvard College - Cambridge MA
  • International Classification:
    B82Y 30/00
    G01N 33/00
    G01N 3/42
  • US Classification:
    702 33, 73 81, 73150 R, 73823, 702 85, 977956
  • Abstract:
    A method of measuring the elastic modulus and hardness of a thin film on substrate using nanoindentation technique is provided. The method includes calculating a series of experimental corrected stiffness and contact radius pairs associated with one or more presumed parameters and information obtained from a loading curve associated with the thin film and substrate. Also, the method includes calculating a series of theoretical corrected stiffness and contact radius pairs associated with the same one or more presumed parameters and information obtained from the loading curve associated with the thin film and substrate. Furthermore, the method includes using results obtained from the experimental and theoretical corrected stiffness and contact radius pairs to compute the elastic modulus and hardness of the film material.
  • Parallel Nano-Differential Scanning Calorimetry

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  • US Patent:
    20070286769, Dec 13, 2007
  • Filed:
    Jun 7, 2007
  • Appl. No.:
    11/759497
  • Inventors:
    Joost Vlassak - Lexington MA, US
    Patrick McCluskey - Cambridge MA, US
  • International Classification:
    G01N 25/20
  • US Classification:
    422051000
  • Abstract:
    A calorimetric system includes a plurality of cell structures being used to define a selective region for calorimetric measurements of a nano-structure. Heating units are positioned on the cell structures to provide the necessary energy needed to perform calorimetric measurements in each of the cell structures. The cell structures and the heating units are arranged so as to allow the calorimetric system to perform, in combinatorial fashion, calorimetric measurements associated with the nano-structure.
  • Method Of Wafer Temperature Measurement

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  • US Patent:
    62478427, Jun 19, 2001
  • Filed:
    Jun 15, 1999
  • Appl. No.:
    9/334147
  • Inventors:
    Vassili M. Kitch - San Ramon CA
    Kevin C. Brown - Sunnyvale CA
    Joost J. Vlassak - Palo Alto CA
  • Assignee:
    National Semiconductor Corporation - Santa Clara CA
  • International Classification:
    G01K 1500
    G01K 716
  • US Classification:
    374183
  • Abstract:
    A method for determining the temperature of a wafer during processing is disclosed. A test wafer is specially prepared in conjunction with a calibration chart. The difference in stack sheet resistance of the test wafer before and after processing is plotted onto the calibration chart to determine the temperature of the test wafer during processing.
  • Method For Manufacturing Low Stress Metallic Interconnect Lines For Use In Integrated Circuits

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  • US Patent:
    63197278, Nov 20, 2001
  • Filed:
    Feb 8, 1999
  • Appl. No.:
    9/246497
  • Inventors:
    Joost Vlassak - Palo Alto CA
  • Assignee:
    National Semiconductor Corporation - Santa Clara CA
  • International Classification:
    H01L 2144
  • US Classification:
    436652
  • Abstract:
    A process for manufacturing metallic interconnect lines of low stress. Process steps according to the present invention first include a step of providing a semiconductor substrate (e. g. a silicon wafer) with an overlying insulating layer, followed by forming a multi-layer stack on the insulating layer. The multi-layer stack includes at least two adjoining layers: one being a metal M layer (for example an aluminum layer) and the other being a material Q layer, where material Q is a material that forms either (i) an electrically conductive intermetallic layer, or (ii) an electrically conducting solid solution layer, with metal M when subjected to the subsequent thermal treatment step. Silicon and titanium meet this requirement when metal M is aluminum. The multi-layer stack is then pattered to form a multi-layer metallic interconnect line.
  • Interpenetrating Networks With Covalent And Ionic Crosslinks

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  • US Patent:
    20210353830, Nov 18, 2021
  • Filed:
    May 14, 2021
  • Appl. No.:
    17/320726
  • Inventors:
    - Cambridge MA, US
    - Seoul, KR
    Kyu Hwan Oh - Seocho-Gu, KP
    Joost J. Vlassak - Lexington MA, US
    Zhigang Suo - Lexington MA, US
    Jianyu Li - Cambridge MA, US
    David J. Mooney - Sudbury MA, US
  • International Classification:
    A61L 27/52
    A61L 27/48
    A61L 27/50
    C08J 3/075
    C08J 3/24
    A61L 27/16
    A61L 27/20
    A61L 27/60
    A61L 27/26
    C08L 5/04
    C08L 33/26
    C08L 71/02
  • Abstract:
    The invention features a composition comprising a self-healing interpenetrating network hydrogel comprising a first network and a second network. The first network comprises covalent crosslinks and the second network comprises ionic or physical crosslinks. For example, the first network comprises a polyacrylamide polymer and second network comprises an alginate polymer.
  • Interpenetrating Networks With Covalent And Ionic Crosslinks

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  • US Patent:
    20200000967, Jan 2, 2020
  • Filed:
    Jul 2, 2019
  • Appl. No.:
    16/459907
  • Inventors:
    - Cambridge MA, US
    - Seoul, KR
    Kyu H. Oh - Seocho-gu, KR
    Joost J. Vlassak - Lexington MA, US
    Zhigang Suo - Lexington MA, US
    Jianyu Li - Cambridge MA, US
    David J. Mooney - Sudbury MA, US
  • International Classification:
    A61L 27/52
    A61L 27/16
    A61L 27/20
    A61L 27/26
    A61L 27/48
    A61L 27/50
    A61L 27/60
    C08J 3/075
    C08J 3/24
    C08L 5/04
    C08L 33/26
    C08L 71/02
  • Abstract:
    The invention features a composition comprising a self-healing interpenetrating network hydrogel comprising a first network and a second network. The first network comprises covalent crosslinks and the second network comprises ionic or physical crosslinks. For example, the first network comprises a polyacrylamide polymer and second network comprises an alginate polymer.
  • Highly Sensitive Microcalorimeters For Cellular Bioenergetics

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  • US Patent:
    20190383758, Dec 19, 2019
  • Filed:
    Nov 13, 2017
  • Appl. No.:
    16/462059
  • Inventors:
    - Cambridge MA, US
    Joost J Vlassak - Lexington MA, US
  • International Classification:
    G01N 25/48
    B01L 7/00
  • Abstract:
    A microcalorimeter device capable of measuring cellular bioenergetics and systems that are limited in analytic volume. The microcalorimeter device provides sub-nWatt resolution and even tens of pico-Watt resolution, thus enabling resolution of the metabolic rate of a single cell.
  • Hydrogels With Improved Mechanical Properties Below Water Freezing Temperature

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  • US Patent:
    20180244858, Aug 30, 2018
  • Filed:
    Sep 1, 2016
  • Appl. No.:
    15/756054
  • Inventors:
    - Cambridge MA, US
    Zhigang Suo - Lexington MA, US
    Joost J. Vlassak - Lexington MA, US
  • Assignee:
    President and Fellows of Harvard College - Cambridge MA
  • International Classification:
    C08J 3/075
    C08J 3/24
    G01L 1/14
  • Abstract:
    Hydrogel compositions, and corresponding methods of making, are provided. The hydrogels do not freeze, or only partially freeze, over a wide range of temperatures below the freezing temperature of water. Concurrently, these hydrogels also retain their room temperature mechanical properties (e.g., strength, modulus, elasticity) over a wide range of temperatures, including temperatures below the freezing temperature of water. The hydrogels are synthesized by adding a suitable amount of a salt together with previously cross-linked polymer gel. Hydration of the gel with aqueous solutions containing the prescribed salts not only depresses the hydrogel freezing point but protects the structure. For example, the salts do not allow the hydrogel to completely freeze, thus protecting the hydrogel from brittle failure. Whether the hydrogels partially freeze or remain non-frozen when chilled below the freezing temperature of water is determined by concentration of salt within the hydrogel.

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Joost Vlassak

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Friends:
Mona Singh, Drew Wingard, Eva Vlassak, Driek Desmet, Omar Leung, Shivraj Mundy

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Joost Vlassak

Work:
Harvard University - Professor
Education:
Stanford University

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