Joseph C Boisvert

US Patent:

6787818, Sep 7, 2004

Filed:

Jun 14, 2002

Appl. No.:

10/172310

Inventors:

Charles B. Morrison - La Crescenta CA
Rengarajan Sudharsanan - Stevenson Ranch CA
Moran Haddad - Winnetka CA
Dimitri Krut - Encino CA
Joseph C. Boisvert - Thousand Oaks CA
Richard R. King - Thousand Oaks CA
Nasser H. Karam - Northridge CA

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 310328

US Classification:

257184, 257439

Abstract:

A diffused junction semiconductor ( ) for detecting light ( ) at a predetermined wavelength is provided including a base ( ) and an epitaxial structure ( ) electrically coupled to the base ( ). The epitaxial structure ( ) forms a p-n junction ( ) in the base ( ). The epitaxial structure ( ) includes at least one diffusion layer ( ) electrically coupled to the base ( ). At least one of the diffusion layers ( ) contributes impurities in at least a portion of the base ( ) to form the p-n junction ( ) during growth of the epitaxial structure ( ). A method for performing the same is also provided.

US Patent:

7049640, May 23, 2006

Filed:

Jun 30, 2004

Appl. No.:

10/883315

Inventors:

Joseph C. Boisvert - Thousand Oaks CA, US
Rengarajan Sudharsanan - Stevenson Ranch CA, US

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 29/732

US Classification:

257186, 257189

Abstract:

An avalanche photodiode having a reduced capacitance is provided. The avalanche photodiode includes a wide band gap layer in its depletion region. The width of the wide band gap layer increases the extent of the depletion region, thereby reducing the capacitance while minimizing the impact on the dark current.

US Patent:

7326970, Feb 5, 2008

Filed:

Mar 11, 2005

Appl. No.:

11/077899

Inventors:

Geoffrey S. Kinsey - Pasadena CA, US
Dmitri D. Krut - Encino CA, US
Joseph C. Boisvert - Thousand Oaks CA, US
Christopher M. Fetzer - Saugus CA, US
Richard R. King - Thousand Oaks CA, US

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 31/109

US Classification:

257186, 257438

Abstract:

A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multiplication structure that receives the primary charge carriers from the metamorphic absorption structure and responsively produces secondary charge carriers. An output electrical contact is in electrical communication with the active structure to collect at least some of the secondary charge carriers. A buffer layer lies between the substrate and the active structure, between the active structure and the output electrical contact, or between the metamorphic absorption structure and the avalanche multiplication structure. A lattice parameter of the buffer layer varies with position through a thickness of the buffer layer.

US Patent:

7592651, Sep 22, 2009

Filed:

Dec 8, 2005

Appl. No.:

11/297009

Inventors:

Joseph C. Boisvert - Thousand Oaks CA, US
Rengarajan Sudharsanan - Stevenson Ranch CA, US

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 27/148

US Classification:

257232, 257184, 257257, 257432, 257E31058

Abstract:

A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and the multiplication layer are formed into at least one mesa having in an inverted “T” configuration to reduce junction area between the absorption layer and the multiplication layer. A dielectric layer is formed over the at least one mesa. At least one contact is formed on the dielectric layer and coupled to the at least one mesa.

US Patent:

7598582, Oct 6, 2009

Filed:

Jun 13, 2007

Appl. No.:

11/762489

Inventors:

Joseph Charles Boisvert - Thousand Oaks CA, US
Takahiro D. Isshiki - Pasadena CA, US
Rengarajan Sudharsanan - Stevenson Ranch CA, US

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 29/78
H01L 31/058

US Classification:

257436, 257432, 257433, 257460

Abstract:

A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P diffusion region.

US Patent:

8642883, Feb 4, 2014

Filed:

Aug 9, 2010

Appl. No.:

12/852574

Inventors:

Joseph Charles Boisvert - Thousand Oaks CA, US
Daniel C. Law - Arcadia CA, US
Richard R. King - Thousand Oaks CA, US
Christopher M. Fetzer - Valencia CA, US

Assignee:

The Boeing Company - Chicago IL

International Classification:

H01L 31/00

US Classification:

136255, 136252

Abstract:

A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.

US Patent:

20040051165, Mar 18, 2004

Filed:

Sep 12, 2002

Appl. No.:

10/242120

Inventors:

Joseph Boisvert - Thousand Oaks CA, US

International Classification:

H01L029/06

US Classification:

257/622000

Abstract:

A recessed p-type region cap layer avalanche photodiode () is provided. The photodiode () includes a semiconductor substrate () and a semiconductor stack (), which is electrically coupled to the substrate (). A cap layer () is electrically coupled to the stack () and includes a recessed p-type region (). The recessed p-type region () forms a p-n junction () with the stack (). A method of forming the photodiode () is also provided. The method includes forming the substrate (), the stack (), and the cap layer (). The cap layer () is selectively etched to expose the stack () and form a cap layer opening (). Dopant is diffused through the cap layer opening () into the stack () to form the p-n junction ().

US Patent:

20060045431, Mar 2, 2006

Filed:

Aug 24, 2004

Appl. No.:

10/925707

Inventors:

Joseph Boisvert - Thousand Oaks CA, US
Anastacio Paredes - Santa Paula CA, US

International Classification:

G02B 6/36

US Classification:

385088000

Abstract:

An integrated fiber alignment photodetector is provided by forming a plurality of photodiodes on a first substrate. A corresponding plurality of through holes are formed in a second substrate, which is then aligned to the first substrate and bonded thereto to form a fiber alignment photodetector assembly. Individual fiber alignment photodiodes may then be diced from the assembly. The through hole on each individual fiber alignment photodiode provides a guide for the insertion of an optical fiber, which may then be bonded within the through hole to complete a fiber alignment photodetector.