Joseph W Griffiths

US Patent:

6972268, Dec 6, 2005

Filed:

Mar 27, 2002

Appl. No.:

10/108101

Inventors:

Jonathan S. Ehrmann - Sudbury MA, US
Joseph J. Griffiths - Winthrop MA, US
Donald V. Smart - Boston MA, US
Donald J. Svetkoff - Ann Arbor MI, US

Assignee:

GSI Lumonics Corporation - Billerica MA

International Classification:

H01L021/26
A61N005/00
G21G005/00

US Classification:

438795, 2504922, 25049223

Abstract:

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

US Patent:

8106329, Jan 31, 2012

Filed:

May 15, 2008

Appl. No.:

12/121684

Inventors:

Bo Gu - North Andover MA, US
Joseph J. Griffiths - Winthrop MA, US
Joohan Lee - Andover MA, US

Assignee:

GSI Group Corporation - Bedford MA

International Classification:

H01L 21/268
G02F 1/01

US Classification:

21912161, 21912169, 438132

Abstract:

A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the seed laser is less than 1 nm with an IR center frequency, and the frequency of the laser light of the pulses is doubled or quadrupled prior to application to the conductive structure. Preferably, the pulses are about 1-18 second pulsewidth and are separated by 100-400 ns.

US Patent:

8269137, Sep 18, 2012

Filed:

Sep 18, 2008

Appl. No.:

12/233476

Inventors:

Jonathan S. Ehrmann - Sudbury MA, US
Joseph J. Griffiths - Winthrop MA, US
James J. Cordingley - Littleton MA, US
Donald J. Svetkoff - Ann Arbor MI, US
Shepard D. Johnson - Andover MA, US
Michael Plotkin - Newton MA, US

Assignee:

GSI Group Corporation - Bedford MA

International Classification:

B23K 26/36

US Classification:

21912169, 438132, 29847

Abstract:

The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.

US Patent:

20070106416, May 10, 2007

Filed:

Nov 30, 2006

Appl. No.:

11/606484

Inventors:

Joseph Griffiths - Winthrop MA, US
Kurt Pelsue - Wayland MA, US

International Classification:

G06F 19/00
B23K 26/38
B23K 26/03

US Classification:

700166000, 219121680, 219121690, 219121830

Abstract:

A method and system for adaptively controlling a laser-based material processing process are provided. The system includes sensing equipment to measure a process variable or condition of at least one of a laser-based material processing system and a workpiece processed by the material processing system and to provide a corresponding measurement signal. The control system also includes a signal processor for processing the measurement signal to obtain a processed signal which initiates, at least semi-automatically, an action associated with at least one of the material processing system and the workpiece. A method and system for at least semi-automatically qualifying a laser-based material processing system which delivers laser energy to locations on or adjacent a plurality of microstructures formed on a workpiece to at least partially process the microstructures are also provided.

US Patent:

20070173075, Jul 26, 2007

Filed:

Jan 29, 2007

Appl. No.:

11/699297

Inventors:

Joohan Lee - Andover MA, US
James Cordingley - Littleton MA, US
Bo Gu - North Andover MA, US
Jonathan Ehrmann - Sudbury MA, US
Joseph Griffiths - Winthrop MA, US

International Classification:

H01L 21/00

US Classification:

438795000

Abstract:

A laser-based method and system for selectively processing a multi-material device having a target link structure formed on a substrate while avoiding undesirable change to an adjacent link structure also formed on the substrate are disclosed. The method includes applying at least one focused laser pulse having a wavelength into a spot. The at least one focused laser pulse has an energy density over the spot sufficient to completely process the target link structure while avoiding undesirable change to the adjacent link structure, the substrate and any layers between the substrate and the link structures. The target link structure and the adjacent structure may have a pitch of about 2.0 microns or less.

US Patent:

20120195331, Aug 2, 2012

Filed:

Jan 27, 2012

Appl. No.:

13/359879

Inventors:

Bo Gu - North Andover MA, US
Joseph J. Griffiths - Winthrop MA, US
Joohan Lee - Andover MA, US

Assignee:

GSI LUMONICS CORPORATION - Billerica MA

International Classification:

H01S 3/10

US Classification:

372 20, 372 25

Abstract:

A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the seed laser is less than 1 nm with an IR center frequency, and the frequency of the laser light of the pulses is doubled or quadrupled prior to application to the conductive structure. Preferably, the pulses are about 1-18 nanosecond pulsewidth and are separated by 100-400 nanoseconds.

US Patent:

20130200050, Aug 8, 2013

Filed:

Sep 10, 2012

Appl. No.:

13/608454

Inventors:

Jonathan S. Ehrmann - Sudbury MA, US
Joseph J. Griffiths - Winthrop MA, US
James J. Cordingley - Littleton MA, US
Donald J. Svetkoff - Ann Arbor MI, US
Shepard D. Johnson - Andover MA, US
Michael Plotkin - Newton MA, US

Assignee:

GSI GROUP CORPORATION - Bedford MA

International Classification:

B23K 26/08
B23K 26/36

US Classification:

21912169

Abstract:

The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.