Joseph E Ryan

US Patent:

7306650, Dec 11, 2007

Filed:

Feb 28, 2003

Appl. No.:

10/477385

Inventors:

Steven J. Slayzak - Denver CO, US
Ren S. Anderson - Broomfield CO, US
Ronald D. Judkoff - Golden CO, US
Daniel M. Blake - Golden CO, US
Todd B. Vinzant - Golden CO, US
Joseph P. Ryan - Golden CO, US

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

B01D 53/14

US Classification:

95 91, 95231, 96118, 96120

Abstract:

A method, and systems for implementing such method, for purifying and conditioning air of weaponized contaminants. The method includes wetting a filter packing media with a salt-based liquid desiccant, such as water with a high concentration of lithium chloride. Air is passed through the wetted filter packing media and the contaminants in are captured with the liquid desiccant while the liquid desiccant dehumidifies the air. The captured contaminants are then deactivated in the liquid desiccant, which may include heating the liquid desiccant. The liquid desiccant is regenerated by applying heat to the liquid desiccant and then removing moisture. The method includes repeating the wetting with the regenerated liquid desiccant which provides a regenerable filtering process that captures and deactivates contaminants on an ongoing basis while also conditioning the air. The method may include filtration effectiveness enhancement by electrostatic or inertial means.

US Patent:

7268057, Sep 11, 2007

Filed:

Mar 30, 2005

Appl. No.:

11/095186

Inventors:

Joseph M. Ryan - Boise ID, US
Damon E. VanGerpen - Kuna ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/762

US Classification:

438427, 438435, 438788, 257E21548

Abstract:

The invention includes methods in which oxide is formed within openings in a three-step process. A first step is deposition of oxide under a pressure of greater than 15 mTorr. A second step is removal of a portion of the oxide with an etch. A third step is an oxide deposition under a pressure of less than or equal to 10 mTorr. Methodology of the present invention can be utilized for forming trenched isolation regions, such as, for example, shallow trench isolation regions.