Joshua Ross Herman

US Patent:

8212337, Jul 3, 2012

Filed:

Jan 10, 2008

Appl. No.:

11/972175

Inventors:

Alfred Grill - White Plains NY, US
Joshua L. Herman - Troy NY, US
Son Nguyen - Schenectady NY, US
E. Todd Ryan - Clifton Park NY, US
Hosadurga K. Shobha - Niskayuna NY, US

Assignee:

International Business Machines Corporation - Armonk NY
Globalfoundries Inc. - Grand Cayman

International Classification:

H01L 23/58
H01L 23/48

US Classification:

257632, 257635, 257762

Abstract:

A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4. 5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.

US Patent:

20120193767, Aug 2, 2012

Filed:

Apr 11, 2012

Appl. No.:

13/444405

Inventors:

Alfred Grill - White Plains NY, US
Joshua L. Herman - Troy NY, US
Son Nguyen - Schenectady NY, US
E. Todd Ryan - Clifton Park NY, US
Hosadurga K. Shobha - Niskayuna NY, US

Assignee:

Globalfoundries Inc. - Grand Cayman KY
International Business Machines Corporation - Armonk NY

International Classification:

H01L 23/58
H01L 23/52

US Classification:

257632, 257751, 257E23141, 257E23002

Abstract:

A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure.

US Patent:

20120202354, Aug 9, 2012

Filed:

Apr 11, 2012

Appl. No.:

13/444415

Inventors:

Alfred Grill - White Plains NY, US
Joshua L. Herman - Troy NY, US
Son Nguyen - Schenectady NY, US
E. Todd Ryan - Clifton Park NY, US
Hosadurga K. Shobha - Niskayuna NY, US

Assignee:

Globalfoundries Inc. - Grand Cayman KY
International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/318

US Classification:

438763, 257E21292

Abstract:

A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.

Address:

1221 Ave Of The Americas, New York, NY 10020

VIN:

1FMCU0E72CKB77175

Make:

FORD

Model:

ESCAPE

Year:

2012