Joshua Yang

US Patent:

8294132, Oct 23, 2012

Filed:

Mar 30, 2010

Appl. No.:

12/750351

Inventors:

Feng Miao - Mountain View CA, US
Joshua Yang - Palo Alto CA, US
Wei Wu - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 29/04
H01L 47/00
H01L 29/02

US Classification:

257 3, 257 1, 257 2

Abstract:

A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.

US Patent:

20110240947, Oct 6, 2011

Filed:

Apr 5, 2010

Appl. No.:

12/754300

Inventors:

Joshua Yang - Palo Alto CA, US
Feng Miao - Mountain View CA, US
Wei Wu - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US

International Classification:

H01L 47/00

US Classification:

257 3, 257E47001, 977734

Abstract:

A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.