Julia B Brown

US Patent:

6363554, Apr 2, 2002

Filed:

Sep 22, 2000

Appl. No.:

09/668809

Inventors:

Julia A. Brown - Saunderstown RI 02874-0601

International Classification:

A47G 900

US Classification:

5490, 5636

Abstract:

A head hugging pillow case including a ruffled extension which provides warmth to the head and shoulders while sleeping. The ruffled extension can be easily shaped to cover the head, face, neck and/or ears for maximum warmth and breathability. The ruffled extension can also be flipped over the top of the pillowcase when not needed for extra warmth. The ruffled extension also provides a light shield for ones eyes during sleep or resting time.

US Patent:

6504235, Jan 7, 2003

Filed:

Jun 6, 2001

Appl. No.:

09/876538

Inventors:

Adele E. Schmitz - Newbury Park CA
Julia J. Brown - Santa Monica CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01L 2358

US Classification:

257649, 257615

Abstract:

A semiconductor passivation technique uses a plasma enhanced chemical vapor deposition (PECVD) process to produce a silicon-rich nitride film as a passivation layer on a Group III-V semiconductor device. The silicon-rich film has a nitrogen to silicon ratio of about 0. 7, has a relatively high index of refraction of, for example, approximately 2. 4, is compressively stressed, and is very low in hydrogen and oxygen content.

US Patent:

63312573, Dec 18, 2001

Filed:

Nov 30, 1999

Appl. No.:

9/452052

Inventors:

Robert Y. Loo - Agoura Hills CA
Adele Schmitz - Newbury Park CA
Julia Brown - Santa Monica CA
James Foschaar - Thousand Oaks CA
Daniel J. Hyman - Cleveland Hts. OH
Tsung-Yuan Hsu - Westlake Village CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01B 1300
H01P 110
B44C 122

US Classification:

216 13

Abstract:

Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.

US Patent:

62286730, May 8, 2001

Filed:

May 13, 1999

Appl. No.:

9/311673

Inventors:

Robert Y. Loo - Agoura Hills CA
Adele E. Schmitz - Newbury Park CA
Julia J. Brown - Santa Monica CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01L 21302

US Classification:

438 57

Abstract:

A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlying the undoped InGaAs absorbing layer. A gold-beryllium p-contact dot is deposited onto the p+ doped InGaAs layer of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot, the p+ doped InGaAs layer, and the undoped InGaAs absorbing layer. The n+ InP contact layer is patterned, and a passive metallic n-contact layer is deposited onto the patterned n+ InP contact layer. A polyimide insulator layer overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer does not cover the passive metal p-contact dot and the metallic n-contact layer. The patterned organic polymer insulator layer is cured and the device is passivated by heating it in a nitrogen atmosphere.

US Patent:

63168200, Nov 13, 2001

Filed:

Aug 28, 1998

Appl. No.:

9/143680

Inventors:

Adele E. Schmitz - Newbury Park CA
Julia J. Brown - Santa Monica CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01L 2358

US Classification:

257649

Abstract:

A semiconductor passivation technique uses a plasma enhanced chemical vapor deposition (PECVD) process to produce a silicon-rich nitride film as a passivation layer on a Group III-V semiconductor device. The silicon-rich film has a nitrogen to silicon ratio of about 0. 7, has a relatively high index of refraction of, for example, approximately 2. 4, is compressively stressed, and is very low in hydrogen and oxygen content.

US Patent:

60437278, Mar 28, 2000

Filed:

May 15, 1998

Appl. No.:

9/079804

Inventors:

Brett Warneke - Berkeley CA
Juan Lam - Agoura Hills CA
Adele Schmitz - Newbury Park CA
Julia Brown - Santa Monica CA
Darren Atkinson - La Habra CA
Daniel J. Hyman - Cleveland Hts. OH
Robert Y. Loo - Agoura Hills CA

Assignee:

Hughes Electronics Corporation - El Segundo CA

International Classification:

H01P 700

US Classification:

333205

Abstract:

A reconfigurable filter system designed using micro-elecro-mechanical (MEM) switches is disclosed. The filter comprises a transmission line with one or more filter stubs coupled to the transmission line by MEM switches. The impedance of the filter system is altered by selectively opening and closing the MEM switches, which alters the filter characteristics of the filter system. Alternatively, the characteristics of the filter system are altered by using the MEM switches to selectively alter the length of filter stubs attached to the transmission line.

US Patent:

60466596, Apr 4, 2000

Filed:

May 15, 1998

Appl. No.:

9/080326

Inventors:

Robert Y. Loo - Agoura Hills CA
Adele Schmitz - Newbury CA
Julia Brown - Santa Monica CA
Jonathan Lynch - Oxnard CA
Debabani Choudhury - Woodland Hills CA
James Foschaar - Thousand Oaks CA
Daniel J. Hyman - Cleveland Hts. OH
Brett Warneke - Berkeley CA
Juan Lam - Agoura Hills CA
Tsung-Yuan Hsu - Westlake Village CA
Jae Lee - University Heights OH
Mehran Mehregany - Pepper Pike OH

Assignee:

Hughes Electronics Corporation - El Segundo CA
Rosemont Aerospace, Inc. - Burnsville MN

International Classification:

H01P 110
H01H 5700

US Classification:

333262

Abstract:

Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.

US Patent:

20170288175, Oct 5, 2017

Filed:

Jun 9, 2017

Appl. No.:

15/618162

Inventors:

- Ewing NJ, US
John FELTS - Alameda CA, US
Jeffrey SILVERNAIL - Yardley PA, US
Zhaoqun ZHOI - Bedford MA, US
Emory KRALL - Philadelphia PA, US
Julia J. BROWN - Yardley PA, US

International Classification:

H01L 51/56
H01L 51/00

Abstract:

Systems and methods for fabricating an OLED are provided, which include dispensing a substrate material onto a substrate carrier, the substrate carrier being rotated by one or more drums, curing the substrate material to form a substrate, depositing at least one OLED onto the substrate, and separating the substrate from the substrate carrier.