Baruch College Counseling Center New York, NY Aug 2012 to Aug 2012 ExternAmerican Federation of Arts New York, NY Nov 2000 to Dec 2008 DirectorGuggenheim Museum New York, NY 1995 to 2000 Curator for Special ExhibitionsSkystone Foundation Flagstaff, AZ 1991 to 1995 DirectorDes Moines Art Center Des Moines, IA 1986 to 1991 DirectorThe Museum of Contemporary Art Los Angeles, CA 1981 to 1986 Senior CuratorThe Hudson River Museum Yonkers, NY 1980 to 1981 CuratorArt-in Architecture Program Washington, DC 1975 to 1980 Project Manager, GSAFederal Arts Project Survey Washington, DC 1974 to 1975 Art Historian, GSADocent Washington, DC 1973 to 1974 Art, Education Department
Education:
New York University New York, NY May 2013 MA in Mental Health CounselingSarah Lawrence College Bronxville, NY BA in Art History
Dec 2010 to 2000 Child and Youth Program AssistantRed Cross Volunteer
Oct 2010 to 2000 Medical Support AssistantTerra Health
Mar 2010 to Sep 2010 Medical Support AssistantBelk Dept Store
May 2007 to Mar 2010 Lancome Counter ManagerLRM Realty
Jun 2006 to Mar 2010 Real Estate AgentAAFES
Mar 2006 to May 2007 Estee Lauder Counter ManagerDillard's Dept Store
Mar 2004 to Mar 2006 Lancome Counter ManagerTurner Mortgage Company Atlanta, GA Feb 1999 to Dec 2003 Loan OfficerSleep Inn
Jul 1997 to Jan 2000 Front Desk Night ManagerUnited States Postal Service Gary, IN Apr 1977 to Feb 1997 Supervisor
Education:
Ashford University Los Angeles, CA May 2010 AA in BusinessU S Career Institute Fort Collins, CO Apr 2009 Finished course in Medical Claims and Billings Specialist MedicineHigh School Fairfield, AL May 1972 CPT in Work Place, Communication Skills, Self-Motivation, Public Speaking, and Diversity
Norton Medical GroupNorton Community Medical Associates 9880 Angies Way STE 420, Louisville, KY 40241 5023946200 (phone), 5023946210 (fax)
Education:
Medical School Northeastern Ohio Universities College of Medicine Graduated: 1995
Procedures:
Allergen Immunotherapy Destruction of Benign/Premalignant Skin Lesions Electrocardiogram (EKG or ECG) Pulmonary Function Tests Skin Tags Removal Vaccine Administration
Conditions:
Anxiety Dissociative and Somatoform Disorders Anxiety Phobic Disorders Chronic Sinusitis Disorders of Lipoid Metabolism Gastroesophageal Reflux Disease (GERD)
Languages:
Chinese English French Spanish
Description:
Dr. Brown graduated from the Northeastern Ohio Universities College of Medicine in 1995. She works in Louisville, KY and specializes in Family Medicine. Dr. Brown is affiliated with Norton Brownsboro Hospital and Norton Womens & Kosair Childrens Hospital.
Emergency Medicine Associates 1601 W Saint Marys Rd, Tucson, AZ 85745 5208724901 (phone), 5208726265 (fax)
Education:
Medical School University of Arizona College of Medicine at Tucson Graduated: 1996
Languages:
English
Description:
Dr. Brown graduated from the University of Arizona College of Medicine at Tucson in 1996. She works in Tucson, AZ and specializes in Emergency Medicine. Dr. Brown is affiliated with Carondelet Saint Josephs Hospital and Carondelet St Marys Hospital.
Academic Urology 200 E State St STE 205, Media, PA 19063 6105652776 (phone), 6105654247 (fax)
Languages:
English Russian Spanish
Description:
Ms. Brown works in Media, PA and specializes in Urology. Ms. Brown is affiliated with Crozer Chester Medical Center, Riddle Hospital and Taylor Hospital.
Medical School University of Kentucky College of Medicine Graduated: 1991
Description:
Dr. Brown graduated from the University of Kentucky College of Medicine in 1991. She works in Springfield, KY and specializes in Internal Medicine. Dr. Brown is affiliated with Flaget Memorial Hospital and Spring View Hospital.
Jonathan Lynch - Ornard CA Stan Livingston - Fullerton CA Jar J. Lee - Westlake Village CA Robert Y. Loo - Agoura Hills CA Juan Lam - Agoura Hills CA Adele Schmitz - Newbury Park CA Debabani Choudhury - Woodland Hills CA Julia Brown - Santa Monica CA Daniel J. Hyman - Cleveland Hts. OH Brett Warneke - Berkeley CA
Assignee:
Hughes Electronics Corporation - El Segundo CA
International Classification:
H01Q 138
US Classification:
343700MS
Abstract:
A multiband millimeterwave antenna system for communicating signals in multiple frequency bands is disclosed. A main antenna body is connected to antenna extensions by micro-electro-mechanical switches. By opening and closing the switches, the length of the antenna can be altered. The antenna is coupled to a microstrip feed line by an aperture. A series of matching stubs match the impedance of the feed line for the various signal frequencies.
Fabrication Of Broadband Surface-Micromachined Micro-Electro-Mechanical Switches For Microwave And Millimeter-Wave Applications
Robert Y. Loo - Agoura Hills CA Adele Schmitz - Newbury Park CA Julia Brown - Santa Monica CA James Foschaar - Thousand Oaks CA Daniel J. Hyman - Cleveland Hts. OH Tsung-Yuan Hsu - Westlake Village CA
Assignee:
Hughes Electronics Corporation - El Segundo CA
International Classification:
H01B 1300 H01P 110 B44C 122
US Classification:
216 13
Abstract:
Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
Method For Making Integrated Heterojunction Bipolar/High Electron Mobility Transistor
Madjid Hafizi - Santa Monica CA Julia J. Brown - Santa Monica CA William E. Stanchina - Thousand Oaks CA
Assignee:
Hughes Electronics Corporation - El Segundo CA
International Classification:
H01L 21338
US Classification:
438170
Abstract:
An integrated circuit technology combines heterojunction bipolar transistors (HBTs), high electron mobility transistors (HEMTs) and other components along with interconnect metallization on a single substrate. In a preferred embodiment a flat substrate is patterned, using dry etching, to provide one or more mesas in locations which will eventually support HEMTs. A device stack including HEMT and HBT layers is built up over the substrate by molecular beam epitaxy, with the active HEMT devices located on the mesas within openings in the HBT layer. In this way the active HEMT is aligned with the HBT layer to planarize the finished integrated circuit.
Method Of Fabricating A Surface Coupled Ingaas Photodetector
Robert Y. Loo - Agoura Hills CA Adele E. Schmitz - Newbury Park CA Julia J. Brown - Santa Monica CA
Assignee:
Hughes Electronics Corporation - El Segundo CA
International Classification:
H01L 21302
US Classification:
438 57
Abstract:
A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlying the undoped InGaAs absorbing layer. A gold-beryllium p-contact dot is deposited onto the p+ doped InGaAs layer of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot, the p+ doped InGaAs layer, and the undoped InGaAs absorbing layer. The n+ InP contact layer is patterned, and a passive metallic n-contact layer is deposited onto the patterned n+ InP contact layer. A polyimide insulator layer overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer does not cover the passive metal p-contact dot and the metallic n-contact layer. The patterned organic polymer insulator layer is cured and the device is passivated by heating it in a nitrogen atmosphere.
Hybrid Bipolar/Field-Effect Power Transistor In Group Iii-V Material System
Lawrence E. Larson - Santa Monica CA Peter Asbeck - San Diego CA Julia J. Brown - Santa Monica CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 2707 H01L 29205
US Classification:
257378
Abstract:
A hybrid power transistor (40) includes a vertical PNP bipolar transistor (42) having a floating base (46). A junction-gate type field-effect transistor (FET) (62) has a lateral N-type channel (64,66) and a vertical electron injection path (54) from the channel (64,66) into the base (46) of the bipolar transistor (42). The FET channel current and thereby the electron injection current are controlled by the FET gate voltage. The injection current conductivity modulates the base (46) and thereby controls the collector current of the bipolar transistor (42). The FET (62) may have a high electron mobility transistor (HEMT), junction-gate field-effect transistor (JFET) or metal-semiconductor field-effect transistor (MESFET) structure. The FET (62) does not require a gate insulating layer, enabling fabrication of the hybrid transistor (40) in the group III-V material system.
Design And Fabrication Of Broadband Surface-Micromachined Micro-Electro-Mechanical Switches For Microwave And Millimeter-Wave Applications
Robert Y. Loo - Agoura Hills CA Adele Schmitz - Newbury CA Julia Brown - Santa Monica CA Jonathan Lynch - Oxnard CA Debabani Choudhury - Woodland Hills CA James Foschaar - Thousand Oaks CA Daniel J. Hyman - Cleveland Hts. OH Brett Warneke - Berkeley CA Juan Lam - Agoura Hills CA Tsung-Yuan Hsu - Westlake Village CA Jae Lee - University Heights OH Mehran Mehregany - Pepper Pike OH
Assignee:
Hughes Electronics Corporation - El Segundo CA Rosemont Aerospace, Inc. - Burnsville MN
International Classification:
H01P 110 H01H 5700
US Classification:
333262
Abstract:
Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.
Davidson Elementary School San Bernardino CA 1964-1970, Arrowview Junior High School San Bernardino CA 1970-1971, Jordan Junior High School Palo Alto CA 1971-1972, Yosemite Park High School El Portal CA 1993-1994
Community:
Petru Negrila, Lacy Burdette, Emily Naiomi, Elizabeth Perez, Toni Miller