Jun Wu

US Patent:

6949335, Sep 27, 2005

Filed:

Feb 1, 2002

Appl. No.:

10/066285

Inventors:

Gregory M. Fahy - Corona CA, US
Jun Wu - Rancho Cucamonga CA, US

Assignee:

21st Century Medicine, Inc. - Rancho Cucamonga CA

International Classification:

A01N001/00
A01N001/02

US Classification:

435 11, 435 12, 435 13

Abstract:

Polyglycerol, lactose, and a combination of polyglycerol and lactose are effective at preserving cells, tissues, and organs from damage due to hypothermic, ischemic, or other metabolic impairment, and a mixture of polyglycerol plus lactose is particularly useful for the hypothermic storage of cells, tissues, and organs. The mixture of polyglycerol and lactose can be further improved by the addition of chondroitin sulfate, chlorpromazine, calcium, citrate, glutathione, adenine, glucose, magnesium, and a pH buffer.

US Patent:

8525221, Sep 3, 2013

Filed:

Nov 25, 2009

Appl. No.:

12/626474

Inventors:

Steven Lester - Sunnyvale CA, US
Jeff Ramer - Sunnyvale CA, US
Jun Wu - Irvine CA, US
Ling Zhang - San Jose CA, US

Assignee:

Toshiba Techno Center, Inc. - Tokyo

International Classification:

H01L 33/00

US Classification:

257101, 257E2712, 257 79, 257 12, 257 1, 257 15, 438 22, 438 29, 438 42, 438 43, 438 44

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

US Patent:

20060024657, Feb 2, 2006

Filed:

Sep 23, 2005

Appl. No.:

11/234461

Inventors:

Greg Fahy - Corona CA, US
Jun Wu - Rancho Cucamonga CA, US

International Classification:

A01N 1/00
A01N 1/02

US Classification:

435001300

Abstract:

Polyglycerol, lactose, and a combination of polyglycerol and lactose are effective at preserving cells, tissues, and organs from damage due to hypothermic, ischemic, or other metabolic impairment, and a mixture of polyglycerol plus lactose is particularly useful for the hypothermic storage of cells, tissues, and organs. The mixture of polyglycerol and lactose can be further improved by the addition of chondroitin sulfate, chlorpromazine, calcium, citrate, glutathione, adenine, glucose, magnesium, and a pH buffer.

US Patent:

20130316483, Nov 28, 2013

Filed:

Aug 5, 2013

Appl. No.:

13/959297

Inventors:

STEVEN LESTER - SUNNYVALE CA, US
JEFF RAMER - SUNNYVALE CA, US
JUN WU - IRVINE CA, US
LING ZHANG - SAN JOSE CA, US

Assignee:

TOSHIBA TECHNO CENTER INC. - Tokyo

International Classification:

H01L 33/06

US Classification:

438 47

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.