Jung T Lin

US Patent:

53189248, Jun 7, 1994

Filed:

Jan 22, 1993

Appl. No.:

8/008052

Inventors:

Jung Lin - Cupertino CA
John E. Turner - Woodside CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 21283

US Classification:

437192

Abstract:

A method of forming interconnects for submicron integrated circuits that allows use of titanium-tungsten as the interconnect material. The inherent instability of titanium-tungsten to oxidation is addressed by a nitridation process that includes exposing the interconnect to an ambient containing nitrogen (NH. sub. 3) at an elevated temperature. Typically, the process is a rapid thermal anneal. A local interconnect may be formed, whereafter an insulating layer can be deposited at a high temperature without causing oxidation within the local interconnect that would adversely affect the resistivity of the material.

US Patent:

51643316, Nov 17, 1992

Filed:

Oct 3, 1991

Appl. No.:

7/770595

Inventors:

Jung Lin - Cupertino CA
Warren M. Uesato - San Jose CA
Leuh Fang - Santa Clara CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 2144
C23F 100

US Classification:

437192

Abstract:

A method of forming an interconnect, particularly a local interconnect, for a silicon substrate having integrated circuit devices between dielectric regions. Titanium disilicide is formed on electrode regions of the integrated circuit devices, whereafter titanium-tungsten is deposited across the silicon substrate. A photomask is formed and patterned to cover selected portions of the titanium-tungsten layer. The uncovered portions receive a preliminary etch of chlorine and carbon tetrafluoride to remove oxide. A second etch using trifluoromethane and oxygen removes the uncovered portions, leaving an electrically conductive interconnect extending from an electrode region onto a dielectric region leading to a second electrode region. The photomask is then removed.