Justin B Millis from 17 Alexander Rd, Londonderry, NH 03053, age 51

Resumes

Nanofabrication Scientist

view source

Location:

17 Alexander Rd, Londonderry, NH 03053

Industry:

Research

Work:

Oxford Nanopore Technologies Ltd
Nanofabrication Scientist
University of Maine Oct 2009 - Jun 2014
Process Engineer and Cleanroom Supervisor
University of Utah Nov 2005 - Oct 2009
Process Engineer and Research Associate

Education:

University of Utah 2007 - 2009
Masters, Electrical Engineering University of Utah 1999 - 2003
Bachelors, Bachelor of Science, Electrical Engineering Gilford High School

Skills:

Photolithography
Lpcvd
Pecvd
Deep Reactive Ion Eching
Microfabrication
Nanofabrication
Cvd
Sputter Deposition
E Beam Evaporation
Simulations
Microfluidics
Mems
Equipment Maintenance
Equipment Installation
Equipment Repair
Characterization
Supervisory Skills
Management

Justin Millis

view source

Justin Millis

view source

Justin Millis Ellsworth, ME

view source

Work:

University of Maine

Sep 2009 to 2000
Microfab Supervisor / Institute for Molecular Biophysics (IMB) Research Engineer University of Utah Nanofab
Salt Lake City, UT
Jan 2006 to Sep 2009
Process Engineer Portsmouth Naval Shipyard
Portsmouth, NH
Jun 2003 to Dec 2005
Test Engineer HEDCO Micro-fabrication Lab
Salt Lake City, UT
Jun 2002 to Jun 2003
Lab Technician/Teaching Assistant

Education:

University of Utah
Salt Lake City, UT
2007 to 2009
Master of Science in Electrical Engineering University of Utah
Salt Lake City, UT
1999 to 2003
Bachelor of Science in Electrical Engineering

Us Patents

Transistors For Replacing Metal-Oxide-Semiconductor Field-Effect Transistors In Nanoelectronics
view source
US Patent:

8253168, Aug 28, 2012
Filed:

Jun 29, 2010
Appl. No.:

12/826480
Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US
Assignee:

University of Utah Research Foundation - Salt Lake City UT
International Classification:

H01L 29/808
US Classification:

257192, 257279, 257E21448, 438188, 438191
Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

Transistors For Replacing Metal-Oxide Semiconductor Field-Effect Transistors In Nanoelectronics
view source
US Patent:

20080308816, Dec 18, 2008
Filed:

Jun 18, 2008
Appl. No.:

12/141473
Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US
Assignee:

University of Utah - Salt Lake City UT
International Classification:

H01L 27/06
G06F 17/50
H01L 21/8232
US Classification:

257 76, 257195, 716 8, 438188, 257E21615, 257E27014
Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

Transistors For Replacing Metal-Oxide-Semiconductor Field-Effect Transistors In Nanoelectronics
view source
US Patent:

20120309142, Dec 6, 2012
Filed:

Jul 27, 2012
Appl. No.:

13/560329
Inventors:

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US
Assignee:

The University of Utah Research Foundation - Salt Lake City UT
International Classification:

G06F 17/50
H01L 21/337
US Classification:

438188, 716110, 257E21445
Abstract:

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.