Karen Therese Lee

US Patent:

60907169, Jul 18, 2000

Filed:

Dec 17, 1996

Appl. No.:

8/767708

Inventors:

Brian H. Floyd - Sunnyvale CA
Chin H. Ho - Sunnyvale CA
Mike F. Chang - Cupertino CA
Min Juang - Milpitas CA
Brian Cheung - San Jose CA
Karen Lee - San Jose CA

Assignee:

Siliconix Incorporated - Santa Clara CA

International Classification:

H01L 21311

US Classification:

438700

Abstract:

In the present method, a semiconductor substrate is provided with an epitaxial layer thereon. A source/drain region is provided in a portion of the epitaxial layer, and a plurality of trenches are etched in the epitaxial layer and extend into the substrate, to define a plurality of mesas. An oxide layer of generally uniform thickness is provided over the mesas and in the trenches, and a polysilicon layer is provided over the oxide layer and is etched so that the oxide layer overlying the mesas is exposed, and the top surface of the polysilicon within the trenches is below the level of the tops of the mesas. A layer of spin-on-glass (SOG) is provided, and the SOG layer and oxide layer are etched substantially to the level of the tops of the mesas, to expose the tops of the mesas and to leave the portions of the SOG over the respective polysilicon portions in the trenches substantially coplaner with the tops of the mesas. A conductive layer is provided over the remaining portions of the SOG layer and the tops of the mesas.

Address:

286 Chester Ave, San Francisco, CA 94132

VIN:

WVWJM7AN1AE090534

Make:

VOLKSWAGEN

Model:

PASSAT

Year:

2010