Kathleen F Perry

US Patent:

50100394, Apr 23, 1991

Filed:

May 15, 1989

Appl. No.:

7/351993

Inventors:

Kathleen A. Perry - Woodland Hills CA

International Classification:

H01L 2147

US Classification:

437228

Abstract:

A method of forming semiconductor device contacts includes the steps of: providing a semiconductor substrate having at least two features thereon whereat it is desired to make electrical connections; forming a layer of etch stop material having a first etch characteristic over each of the features; forming a layer of dielectric material having a second etch characteristic over each of the features; simultaneously etching at least two vias through the layer of dielectric material using an etchant selective to the layer of dielectric material so as to substantially stop on the layer of etch stop material, the at least two vias including a via over each of the features; and extending the vias through the layer of etch stop material so as to expose the features for subsequent electrical connections.