Kathleen A Tobin

US Patent:

6364730, Apr 2, 2002

Filed:

Jan 18, 2000

Appl. No.:

09/484930

Inventors:

James E. Jaskie - Scottsdale AZ
Albert Alec Talin - Scottsdale AZ
Paul VonAllmen - Mesa AZ
Bernard F. Coll - Fountain Hills AZ
Kathleen Anne Tobin - San Antonio TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J 902

US Classification:

445 24, 313309, 345 752

Abstract:

A method for operating a field emission device ( ) having an electron emitter ( ) includes the steps of providing an emitter-enhancing electrode ( ) proximate to electron emitter ( ), causing emitter-enhancing electrode ( ) to emit electrons, and causing the electrons emitted by emitter-enhancing electrode ( ) to be received by electron emitter ( ). A method for fabricating a field emission device ( ) includes the steps of forming a layer ( ) of dielectric material, forming emitter-enhancing electrode ( ) on layer ( ) of dielectric material, forming an enhanced-emission structure ( ) in emitter-enhancing electrode ( ), removing a portion of layer ( ) of dielectric material proximate to enhanced-emission structure ( ) to form a well ( ), and forming electron emitter ( ) within well ( ).

US Patent:

6400068, Jun 4, 2002

Filed:

Jan 18, 2000

Appl. No.:

09/484665

Inventors:

James E. Jaskie - Scottsdale AZ
Albert Alec Talin - Scottsdale AZ
Bernard F. Coll - Fountain Hills AZ
Kathleen Anne Tobin - San Antonio TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J 1304

US Classification:

313309, 313306

Abstract:

A field emission device ( ) includes an electron emitter ( ) and an emitter-enhancing electrode ( ) having an enhanced-emission structure ( ), which is disposed proximate to electron emitter ( ). Enhanced-emission structure ( ) is embodied by, for example, each of the following structures: a tapered portion ( ) of emitter-enhancing electrode ( ), an electron-emissive edge ( ) that is generally parallel to an axis ( ) of electron emitter ( ), a combination of a conductive layer ( ) and an electron-emissive layer ( ) that is disposed proximate to an edge ( ) of conductive layer ( ), and an electron-emissive layer ( ) having a thickness of less than about 500 angstroms.

US Patent:

56989415, Dec 16, 1997

Filed:

Jan 16, 1996

Appl. No.:

8/585089

Inventors:

James E. Jaskie - Scottsdale AZ
Lawrence N. Dworsky - Scottsdale AZ
Karen E. Jachimowicz - Laveen AZ
Fred V. Richard - Scottsdale AZ
Kathleen Tobin - Tempe AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

F21V 700
H01J 516
H01K 126

US Classification:

313494

Abstract:

An optical correction layer for a light emitting apparatus having gaps in brightness at the light-emitting surface. The optical correction layer includes a plurality of optical correction regions centered over the gaps, and a plurality of optically transparent regions which overlay the remainder of the light-emitting surface. The optical correction regions include appropriately formed grooves which collect and redirect light adjacent the gap. The light is redirected to cover and effectively conceal the gap. The optically transparent regions permit light to travel through, without redirection.

US Patent:

56693036, Sep 23, 1997

Filed:

Mar 4, 1996

Appl. No.:

8/610776

Inventors:

George N. Maracas - Phoenix AZ
Lawrence N. Dworsky - Scottsdale AZ
Kathleen Tobin - Tempe AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

B41F 3100

US Classification:

101327

Abstract:

An apparatus (100) including a support structure (104), a flexible stamp (106) having a stamping surface (110) including a predetermined pattern disposed opposite the support structure (104), a pressure controlled chamber (112) disposed above the support structure (104), and a mechanical attachment (114) affixed to the flexible stamp (106). A method is provided for stamping the surface (101) of an article (102) including the steps of i) placing the article (102) on the support structure (104) within the pressure-controlled chamber (112), ii) wetting the stamping surface (110) with a solution containing a self-assembled monolayer-forming molecular species, iii) aligning alignment patterns (118) on the flexible stamp (106) with alignment patterns (124) on the surface (101) of the article (102), iv) controllably contacting the wetted stamping surface (110) with the surface (101) of the article (102) by changing the pressure differential across the flexible stamp (106) so that contact commences at the center of the flexible stamp (106) and proceeds outwardly in a controlled manner, and v) removing the stamping surface (110) from the surface (101) of the article so that a self-assembled monolayer (134) having the predetermined pattern is formed on the surface (101) of the article (102).

US Patent:

57265291, Mar 10, 1998

Filed:

May 28, 1996

Appl. No.:

8/656993

Inventors:

Kenneth Dean - Phoenix AZ
Ralph Cisneros - Tempe AZ
Kathleen Tobin - Tempe AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

H01J 162
H01J 6304
H01J 100
H01J 1900

US Classification:

313495

Abstract:

A spacer (200) for a field emission display (201) is disclosed. The spacer (200) includes a lower resistive region (220) and an upper insulative region (222). The spacer (200) has a member (210) which is coated with a resistive coating (212) extending between the lower end of the member and a height (h. sub. 2) less than the total height (h. sub. 1) of the spacer (200). An insulative coating (218) is formed on the member (210) and extends between the upper end of the resistive coating (212) and the upper end of the member (210). The resistive coating (212) has a secondary electron yield less than 2 over the lower resistive region (220) of the spacer (200). The insulative coating (218) has a secondary electron yield between 0. 75-2 over the upper insulative region (222) of the spacer (200).

US Patent:

61372137, Oct 24, 2000

Filed:

Oct 21, 1998

Appl. No.:

9/176150

Inventors:

Curtis D. Moyer - Phoenix AZ
Peter A. Smith - Chandler AZ
Robert H. Reuss - Fountain Hills AZ
Troy A. Trottier - Mesa AZ
Steven A. Voight - Gilbert AZ
Diane A. Carrillo - Phoenix AZ
Kevin J. Nordquist - Higley AZ
Jaynal A. Molla - Gilbert AZ
David W. Jacobs - Higley AZ
Kathleen A. Tobin - San Antonio TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J 102

US Classification:

313309

Abstract:

A field emission device (100, 150) includes a cathode plate (102, 180) having electron emitters (116), an anode plate (104, 170) having a phosphor (107, 207, 307, 407) activated by electrons (119) emitted by electron emitters (116), and a vacuum bridge focusing structure (118, 158, 218, 318) for focusing electrons (119) emitted by electron emitters (116). Vacuum bridge focusing structure (118, 158, 218, 318) has landings (121, 122, 221, 322), which are attached to cathode plate (102, 180), and further has bridges (120, 220, 320), which extend above and beyond landings (121, 122, 221, 322, 421) to provide a self-supporting structure that is spaced apart from cathode plate (102, 180).

US Patent:

57279772, Mar 17, 1998

Filed:

Mar 4, 1996

Appl. No.:

8/608023

Inventors:

George N. Maracas - Phoenix AZ
Lawrence N. Dworsky - Scottsdale AZ
Herbert Goronkin - Tempe AZ
Kathleen Tobin - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J 902

US Classification:

445 24

Abstract:

A process for manufacturing of a field emission device (100, 200) including the steps of i) providing a substrate (101, 201), ii) forming a conductive row (106, 206), ii) forming a dielectric layer (102, 202), iv) forming a resist layer (116, 216), v) forming a self-assembled monolayer (112, 212) of a self-assembled monolayer-forming molecular species on the resist layer (116, 216) so that the self-assembled monolayer (112, 212) defines an etch pattern for an emitter well (107, 207), vi) etching the resist layer (116, 216), vii) etching the dielectric layer ((102, 202), viii) forming conductive column (103, 203), and ix) forming the electron-emitter structure (105, 208) within the emitter well (107, 207).