Keith P Pierce

US Patent:

6616717, Sep 9, 2003

Filed:

May 16, 2001

Appl. No.:

09/859147

Inventors:

Vikas Sachan - Hockessin DE
Qianqiu (Christine) Ye - Wilmington DE
Keith G. Pierce - Colorado Springs CO
Craig D. Lack - Wilmington DE
Terence M. Thomas - Newark DE
Peter A. Burke - Avondale PA
David Gettman - Bear DE
Sarah Lane - Elkton MD

Assignee:

Rodel Holdings, Inc. - Wilmington DE

International Classification:

C09G 102

US Classification:

51298, 51307, 106 3

Abstract:

A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO ). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

US Patent:

6693035, Feb 17, 2004

Filed:

Oct 19, 1999

Appl. No.:

09/420682

Inventors:

Vikas Sachan - Hockessin DE
Peter A. Burke - Avondale PA
Keith G. Pierce - Colorado Springs CO

Assignee:

Rodel Holdings, Inc. - Wilmington DE

International Classification:

H01L 21302

US Classification:

438692, 438693, 252 791

Abstract:

A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.

US Patent:

6699299, Mar 2, 2004

Filed:

Mar 20, 2003

Appl. No.:

10/393074

Inventors:

Vikas Sachan - Hockessin DE
Qianqiu (Christine) Ye - Wilmington DE
Keith G. Pierce - Colorado Springs CO
Craig D. Lack - Wilmington DE
Terence M. Thomas - Newark DE
Peter A. Burke - Avondale PA
David Gettman - Bear DE
Sarah Lane - Elkton MD

Assignee:

Rodel Holdings, Inc. - Wilmington DE

International Classification:

B24B 100

US Classification:

51298, 438691, 438692, 451 36, 106 3

Abstract:

A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO ). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

US Patent:

20020019202, Feb 14, 2002

Filed:

Feb 28, 2001

Appl. No.:

09/795241

Inventors:

Terence Thomas - Newark DE, US
Qianqiu (Christine) Ye - Wilmington DE, US
Joseph So - Newark DE, US
Peter Burke - Vancouver WA, US
Vikas Sachan - Richardson TX, US
Elizabeth Langlois - Wilimington DE, US
Keith Pierce - Colorado Springs CO, US
Craig Lack - Wilmington DE, US
David Gettman - Fresno CA, US
Hiroyuki Senoo - Kohriyama-Shi, JP
Kouchi Yoshida - Yamato Kohriyama-Shi, JP
Yoshikazu Nishida - Yamato Kohriyama-shi, JP
Vilas Koinkar - Wilmington DE, US
Raymond Lavoie - Chesapeake City MD, US

International Classification:

B24B007/22

US Classification:

451/057000

Abstract:

A two-step method for chemical mechanical polishing of a semiconductor substrate having successive layers, comprised of, a metal layer, an underlying barrier film and an underlying dielectric layer. The first polishing step is performed utilizing a slurry composition selective to the metal in the metal layer, to remove the metal at a high removal rate during polishing, and the second polishing step is performed utilizing a slurry composition selective to the barrier film and least selective to the metal layer and the underlying dielectric layer. In an alternate embodiment, the second polishing step is performed with a slurry equally selective to the barrier layer and the underlying dielectric layer and least selective to the metal of the metal layer, to remove the barrier layer at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the metal interconnection structure in the underlying dielectric layer.

US Patent:

58608486, Jan 19, 1999

Filed:

Nov 27, 1996

Appl. No.:

8/758064

Inventors:

Scott B. Loncki - Lincoln University PA
Lee Melbourne Cook - Steelville PA
James Shen - Bear DE
Keith G. Pierce - Newark DE

Assignee:

Rodel, Inc. - Newark DE

International Classification:

B24B 104

US Classification:

451 36

Abstract:

An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles at about 0. 02 to about 0. 5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm and an iron, nickel and copper content each below about 0. 1 ppm, all ppm being parts per million by weight of the composition.

US Patent:

63311348, Dec 18, 2001

Filed:

Jun 10, 1999

Appl. No.:

9/329225

Inventors:

Vikas Sachan - Hockessin DE
Qianqiu (Christine) Ye - Wilmington DE
Keith G. Pierce - Colorado Springs CO
Craig D. Lack - Wilmington DE
Terence M. Thomas - Newark DE
Peter A. Burke - Avondale PA
David Gettman - Bear DE
Sarah Lane - Elkton MD

Assignee:

Rodel Holdings Inc. - Wilmington DE

International Classification:

B24B 100

US Classification:

451 41

Abstract:

A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO. sub. 2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.

Address:

2514 S 6 St, Allentown, PA 18103

Phone:

8569351752

VIN:

1GCHC23U87F152975

Make:

CHEVROLET

Model:

SILVERADO C2500

Year:

2007