Kelly W Jones

US Patent:

7600146, Oct 6, 2009

Filed:

Apr 3, 2007

Appl. No.:

11/696001

Inventors:

John Liccione - Crofton MD, US
Kelly M. Jones - Arnold MD, US

Assignee:

Dell Marketing USA L.P. - Round Rock TX

International Classification:

G06F 11/00

US Classification:

714 3, 714 15

Abstract:

Stable and automated recovery of an application executing on a primary computer system by transitioning to secondary computer system is provided. Intelligent agents installed on a primary client server allow the primary environment to be replicated on a host, secondary environment. This creates continuous availability of applications executing on the primary system via the mirrored host environment. Every transaction on the client environment (e. g. , every piece of data) is replicated in real-time on the host environment. A simple mechanism (e. g. , a button) is provided to allow access to the secondary environment thereby switching over from the client environment to the host environment in the case of, with respect to the primary environment, a disaster, a need to perform maintenance, system failure and the like.

US Patent:

8049178, Nov 1, 2011

Filed:

Aug 29, 2008

Appl. No.:

12/202026

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

G01T 1/26

US Classification:

250371, 25037011, 250361 R

Abstract:

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

US Patent:

8070987, Dec 6, 2011

Filed:

Mar 5, 2007

Appl. No.:

11/910504

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Watertown MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

H01B 1/06

US Classification:

2525194, 2525211, 25037012

Abstract:

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

US Patent:

8283637, Oct 9, 2012

Filed:

Jan 13, 2011

Appl. No.:

13/006050

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

G01T 1/24
H01L 31/115

US Classification:

250361R, 25037011

Abstract:

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

US Patent:

20120045887, Feb 23, 2012

Filed:

Nov 1, 2011

Appl. No.:

13/286829

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US

Assignee:

WASHINGTON STATE UNIVERSITY RESEARCH FOUNDATION - Pullman WA

International Classification:

H01L 21/22
H01B 1/02

US Classification:

438510, 252512, 257E21135

Abstract:

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.