Kelvin G Lynn

US Patent:

6737789, May 18, 2004

Filed:

Dec 2, 2002

Appl. No.:

10/308358

Inventors:

Leon J. Radziemski - Tucson AZ 85750
Kelvin G. Lynn - Pullman WA 99163

International Classification:

H01L 4104

US Classification:

310339, 310319

Abstract:

A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.

US Patent:

7192481, Mar 20, 2007

Filed:

Jun 10, 2003

Appl. No.:

10/516799

Inventors:

Csaba Szeles - Allison Park PA, US
Kelvin G. Lynn - Pullman WA, US

Assignee:

II-VI Incorporated - Saxonburg PA

International Classification:

C30B 28/08

US Classification:

117 45, 117 43

Abstract:

A radiation detector made from a compound, or alloy, comprising CdxZn1−xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

US Patent:

8049178, Nov 1, 2011

Filed:

Aug 29, 2008

Appl. No.:

12/202026

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

G01T 1/26

US Classification:

250371, 25037011, 250361 R

Abstract:

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

US Patent:

8070987, Dec 6, 2011

Filed:

Mar 5, 2007

Appl. No.:

11/910504

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Watertown MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

H01B 1/06

US Classification:

2525194, 2525211, 25037012

Abstract:

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

US Patent:

8283637, Oct 9, 2012

Filed:

Jan 13, 2011

Appl. No.:

13/006050

Inventors:

Kelvin Lynn - Pullman WA, US
Kelly Jones - Colfax WA, US
Guido Ciampi - Waltham MA, US

Assignee:

Washington State University Research Foundation - Pullman WA

International Classification:

G01T 1/24
H01L 31/115

US Classification:

250361R, 25037011

Abstract:

High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.

US Patent:

20040212280, Oct 28, 2004

Filed:

May 18, 2004

Appl. No.:

10/848952

Inventors:

Leon Radziemski - Tucson AZ, US
Kelvin Lynn - Pullman WA, US

International Classification:

H01L041/08

US Classification:

310/339000

Abstract:

A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.

US Patent:

20050206275, Sep 22, 2005

Filed:

May 13, 2005

Appl. No.:

11/128482

Inventors:

Leon Radziemski - Tucson AZ, US
Kelvin Lynn - Pullman WA, US

International Classification:

H01L041/113

US Classification:

310339000

Abstract:

A source of electric power is disclosed. The power source comprises a piezoelectric element configured to generate an electric charge responsive to an applied stress, where that piezoelectric element is selected from the group consisting of (1-x)Pb(ANb)O-xPbTiO, 0.5[(1-x)PbYbNbO-xPbTiO]-0.5PbZrO, and Pb(YbNb)O—PbTiO, wherein A is selected from the group comprising Zn and Mg, and wherein x is a number greater than 0 and less than 1. In these embodiments, Applicants' power source further comprises a rectifier, and a charge return path interconnected to the piezoelectric element and to the rectifier, wherein the charge return path conducts electrical charge to the piezoelectric element to prevent depolarization or stiffening from occurring after repeated cycles of piezoelectric charge generation. When the piezo element provides voltages below a few volts, a transformer may beneficially be added between the piezoelement and the rectifier to reduce rectifier losses.

US Patent:

20080151954, Jun 26, 2008

Filed:

Jul 12, 2007

Appl. No.:

11/827608

Inventors:

Kelvin G. Lynn - Pullman WA, US
Elgin E. Eissler - Renfrew PA, US
Xiaoming Li - Allison Park PA, US

Assignee:

II-VI Incorporated - Saxonburg PA

International Classification:

H01S 3/16
C01F 17/00
C30B 15/00

US Classification:

372 41, 117 73, 117 13, 423263

Abstract:

In a method of forming an Nd:YVOlaser crystal, a melt of Nd:YVOin a vacuum is provided and an Nd:YVOseed crystal is provided in the vacuum with its c-axis oriented perpendicular to a surface of the melt. While in the vacuum, Nd:YVOfrom the melt is caused to adhere to the Nd:YVOseed crystal thereby forming an Nd:YVOboule with its c-axis oriented perpendicular to the surface of the melt. A portion of the boule can be removed therefrom to become an Nd:YVOlaser crystal having no sub-grain boundaries and/or ghost veils in a cross section thereof perpendicular to the c-axis. This c-axis grown Nd:YVOcrystal can be used as the lasing element of a laser.