Kenneth H Frederick

US Patent:

57334188, Mar 31, 1998

Filed:

May 7, 1996

Appl. No.:

8/646149

Inventors:

Ady I. Hershcovitch - Mt. Sinai NY
Vincent J. Kovarik - Melbourne FL
Kenneth H. Frederick - Rockledge FL

Assignee:

PLD Advanced Automation Systems, Inc. - Rockledge FL

International Classification:

C23C 1434

US Classification:

20419211

Abstract:

A method and apparatus are provided for sputtering particles from a target as a film on a substrate. The target and substrate are maintained in a main housing in a first vacuum. The target is biased with a first negative voltage to effect a target bias. A plasma is produced in a cathode box spaced from the target, with the plasma being injected between the target and substrate to effect sputtering by bombarding the target with positive ions and liberating target particles for condensing on the substrate to form the film. The cathode box includes a cathode biased at a second negative voltage to effect a cathode bias, and a sputtering gas is supplied adjacent to the cathode for producing the plasma. Plasma production in the cathode box is decoupled from sputtering at the target for increasing sputtering yield and rate. And, the target may be contoured for focussing the sputtered particles on the substrate.