Kenneth R Gault

US Patent:

7342290, Mar 11, 2008

Filed:

Nov 4, 2004

Appl. No.:

10/981232

Inventors:

Jay S. Burnham - East Fairfield VT, US
James R. Elliott - Richmond VT, US
Kenneth R. Gault - Charlotte VT, US
Mousa H. Ishaq - Essex Junction VT, US
Steven M. Shank - Jericho VT, US
Mary A. St. Lawrence - Colchester VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/76
H01L 29/94
H01L 31/00

US Classification:

257411, 438783, 257913, 257E21226, 257E21639, 257E23137

Abstract:

A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.

US Patent:

20040192065, Sep 30, 2004

Filed:

Mar 28, 2003

Appl. No.:

10/249292

Inventors:

Jay Burnham - East Fairfield VT, US
James Elliott - Richmond VT, US
Kenneth Gault - Charlotte VT, US
Mousa Ishaq - Essex Junction VT, US
Steven Shank - Jericho VT, US
Mary St. Lawrence - Colchester VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/31

US Classification:

438/758000

Abstract:

A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.