Kenneth J Gerber

US Patent:

7592594, Sep 22, 2009

Filed:

Nov 13, 2006

Appl. No.:

11/598492

Inventors:

Robert P. Ginn - Ventura CA, US
Kenneth A. Gerber - Santa Maria CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 25/00

US Classification:

250332, 2503384, 250352, 25037001, 257436, 257469, 257E25006, 438 68, 438113

Abstract:

A method includes bonding a first side of a metal shim to a silicon shim, removing metal from the metal shim to form a plurality of cleared metal lanes in accordance with a pattern, bonding a readout integrated circuit having a plurality of saw lanes in accordance with the pattern to a second side of the metal shim to form a wafer assembly wherein the plurality of saw lanes is aligned with the plurality of cleared metal lanes, and dicing the wafer assembly.

US Patent:

8084288, Dec 27, 2011

Filed:

Aug 11, 2009

Appl. No.:

12/462912

Inventors:

Robert P. Ginn - Ventura CA, US
Kenneth A. Gerber - Santa Maria CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/00

US Classification:

438 67, 438 68, 438113, 257E21001

Abstract:

A method includes bonding a first side of a metal shim to a silicon shim, removing metal from the metal shim to form a plurality of cleared metal lanes in accordance with a pattern, bonding a readout integrated circuit having a plurality of saw lanes in accordance with the pattern to a second side of the metal shim to form a wafer assembly wherein the plurality of saw lanes is aligned with the plurality of cleared metal lanes, and dicing the wafer assembly.

US Patent:

20080090319, Apr 17, 2008

Filed:

Oct 17, 2006

Appl. No.:

11/582937

Inventors:

Robert Ginn - Ventura CA, US
Kenneth Gerber - Santa Maria CA, US
Andreas Hampp - Santa Barbara CA, US
Alexander Childs - Goleta CA, US

International Classification:

H01L 21/00

US Classification:

438048000, 438057000, 438093000, 438094000

Abstract:

InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.