Abstract:
A novel method for forming substrate contact regions on a SOI substrate without requiring additional space, and in order to provide lower diffusion capacitance. The method utilizes known semiconductor processing techniques. This method for selectively modifying the BOX region of a SOI substrate involves first providing a silicon substrate. Then, ion implanting the base using SIMOX techniques (e. g. O implant) is accomplished. Next, the substrate is photopatterned to protect the modified BOX region. Then, further ion implanting using a âtouch-upâ O implant is accomplished, thereby resulting in a good quality BOX as typically practiced. The final step is annealing the substrate. The area of the substrate, which had a mask present, would not receive the âtouch-upâ O implant (second ion implant), which in turn would result in a leaky BOX.