Kenneth Dean Hagen

US Patent:

6632727, Oct 14, 2003

Filed:

Aug 27, 2001

Appl. No.:

09/939900

Inventors:

Howard E. Rhodes - Boise ID
Kirk D. Prall - Boise ID
Philip J. Ireland - Boise ID
Kenneth N. Hagen - Meridian ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21425

US Classification:

438514, 438648

Abstract:

A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.

US Patent:

6667554, Dec 23, 2003

Filed:

Aug 27, 2001

Appl. No.:

09/940229

Inventors:

Howard E. Rhodes - Boise ID
Kirk D. Prall - Boise ID
Philip J. Ireland - Boise ID
Kenneth N. Hagen - Meridian ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2348

US Classification:

257773, 257774

Abstract:

A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.

US Patent:

63034921, Oct 16, 2001

Filed:

Aug 12, 1999

Appl. No.:

9/373101

Inventors:

Howard E. Rhodes - Boise ID
Kirk D. Prall - Boise ID
Philip J. Ireland - Boise ID
Kenneth N. Hagen - Meridian ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 214763

US Classification:

438648

Abstract:

A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.

US Patent:

57633223, Jun 9, 1998

Filed:

Jul 8, 1996

Appl. No.:

8/676593

Inventors:

Kenneth Hagen - Meridian ID
Howard E. Rhodes - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 214763
H01L 2131
H01L 21469

US Classification:

438632

Abstract:

An annealing method includes providing a wafer having a film stack including at least a flowable film and a semirigid film formed on the flowable film. The film stack is exposed to an initial temperature followed by exposure to an intermediate temperature for an intermediate exposure time period. Then, the film stack is exposed to a final anneal temperature for a final anneal exposure time period. The film stack may include another nonflowable or flowable film formed on the semirigid film. The film stack may be exposed to one or more additional intermediate temperatures for additional intermediate exposure time periods. The film stack may be an oxide/polysilicon/oxide film stack and the oxide films may be doped oxides. A device or wafer having a film stack annealed in accordance with the annealing method is also provided.

US Patent:

20190252338, Aug 15, 2019

Filed:

Apr 18, 2019

Appl. No.:

16/387771

Inventors:

- Boise ID, US
Kenneth N. Hagen - Boise ID, US

International Classification:

H01L 23/00
H01L 21/66
H01L 25/065
H01L 25/00

Abstract:

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

US Patent:

20170358547, Dec 14, 2017

Filed:

Aug 28, 2017

Appl. No.:

15/687691

Inventors:

- Boise ID, US
Kenneth N. Hagen - Boise ID, US

International Classification:

H01L 23/00
H01L 25/065
H01L 25/00
H01L 21/66

Abstract:

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

US Patent:

20160225731, Aug 4, 2016

Filed:

Jan 29, 2015

Appl. No.:

14/608466

Inventors:

- Boise ID, US
Kenneth N. Hagen - Boise ID, US

International Classification:

H01L 23/00
H01L 21/66

Abstract:

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.