Kenneth W Sharp

US Patent:

6489386, Dec 3, 2002

Filed:

Aug 9, 2000

Appl. No.:

09/634288

Inventors:

Irene Greenwald Plotzker - Wilmington DE
Thomas Michael Ford - Greenville DE
Kenneth George Sharp - Landenberg PA
Samuel Tacitus DArcangelis - Randolph NJ

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

C08K 509

US Classification:

524291, 524222

Abstract:

A polymer composition and method for reducing the permeability of gases through molded polymeric containers and films by incorporating into the polymer from which the container or film is formed an effective amount of a barrier-enhancing additive, such as monoesters of hydroxybenzoic acid and hydroxynaphthoic acid.

US Patent:

7666567, Feb 23, 2010

Filed:

Oct 23, 2007

Appl. No.:

11/877633

Inventors:

Feng Gao - Hockessin DE, US
Lynda Kaye Johnson - Wilmington DE, US
Roupen Leon Keusseyan - Raleigh NC, US
Irina Malajovich - Swarthmore PA, US
Jeffrey Scott Meth - Landenberg PA, US
Kenneth George Sharp - Landenberg PA, US
Seema Agrawal - Newark DE, US

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03C 8/00

US Classification:

430200, 430201

Abstract:

Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

US Patent:

8308886, Nov 13, 2012

Filed:

Jul 17, 2006

Appl. No.:

11/488262

Inventors:

Gerald Donald Andrews - Hockessin DE, US
Marc B Goldfinger - West Chester PA, US
Mark Andrew Harmer - Landenberg PA, US
Gary Delmar Jaycox - West Chester PA, US
Lynda Kaye Johnson - Wilmington DE, US
Irina Malajovich - Swarthmore PA, US
William J Marshall - Wilmington DE, US
Elizabeth Forrester McCord - Hockessin DE, US
Charles Nehemiah McEwen - Newark DE, US
Jeffrey Scott Meth - Landenberg PA, US
Richard Kevin Bailey - Newark DE, US
Geoffrey Nunes - Swarthmore PA, US
Rinaldo Soria Schiffino - Wilmington DE, US
Paul J Shannon - Exton PA, US
Kenneth George Sharp - Landenberg PA, US
Karyn B Visscher - Morris Plains NJ, US
Graciela Beatriz Blanchet - Boston MA, US
Reid John Chesterfield - Wilmington DE, US
Thomas C Felder - Kennett Square PA, US
Feng Gao - Hockessin DE, US
Howard David Glicksman - Durham NC, US

Assignee:

E I du Pont de Nemours and Company - Wilmington DE

International Classification:

B41M 5/40
B32B 3/10
H01L 29/78

US Classification:

156235, 257288, 257E29255, 428 3272, 428 3274, 428 3277, 428207

Abstract:

The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.

US Patent:

8377622, Feb 19, 2013

Filed:

Sep 22, 2011

Appl. No.:

13/239826

Inventors:

Gerald Donald Andrews - Hockessin DE, US
Richard Kevin Bailey - Newark DE, US
Graciela Beatriz Blanchet - Wilmington DE, US
Reid John Chesterfield - Santa Barbara CA, US
Feng Gao - Hockessin DE, US
Marc B. Goldfinger - West Chester PA, US
Gary Delmar Jaycox - West Chester PA, US
Lynda Kaye Johnson - Wilmington DE, US
William J. Marshall - Wilmington DE, US
Elizabeth Forrester McCord - Hockessin DE, US
Charles Nehemiah McEwen - Newark DE, US
Jeffrey Scott Meth - Landenberg PA, US
Geoffrey Nunes - Swarthmore PA, US
Kenneth George Sharp - Landenberg PA, US

Assignee:

E.I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03F 7/00
G03F 7/004
B14M 5/40
G03C 8/00

US Classification:

430200, 4302701, 430905, 428 3274

Abstract:

The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

US Patent:

6096460, Aug 1, 2000

Filed:

Apr 20, 1999

Appl. No.:

9/294575

Inventors:

Roger Harquail French - Wilmington DE
Kenneth George Sharp - Landenberg PA

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1. 2 to 2. 0, preferably in the range from 1. 26 to 1. 8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0. 04 to 0. 8, preferably in the range from 0. 06 to 0. 59 at the selected lithographic wavelength below 400 nm.

US Patent:

61746312, Jan 16, 2001

Filed:

Jan 18, 2000

Appl. No.:

9/484149

Inventors:

Roger Harquail French - Wilmington DE
Kenneth George Sharp - Landenberg PA

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1. 2 to 2. 0, preferably in the range from 1. 26 to 1. 8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0. 04 to 0. 8, preferably in the range from 0. 06 to 0. 59 at the selected lithographic wavelength below 400 nm.