Kenneth R Short

US Patent:

6461348, Oct 8, 2002

Filed:

Aug 27, 1999

Appl. No.:

09/384122

Inventors:

Howard S. Bertan - Jericho NY 11753
Kenneth L. Short - Setauket NY 11733

International Classification:

A61B 1818

US Classification:

606 9, 315200 A, 315214, 315241 R, 315244

Abstract:

A photo-thermal epilation apparatus enables the efficient delivery of a high energy light pulse of a sufficiently short duration to a selected follicle to effect permanent hair removal. The apparatus includes a flash lamp powered by a power supply module having an energy storage module interposed between the power supply module and the flash lamp. The energy storage. module, which has an output or network impedance matched to the flash lamp, produces a flattened and extended current pulse that is coupled from the energy storage module to the flash lamp in order to the energize the flash lamp to produce the desired high energy light pulse. An optical system, which includes a tapered needle-less probe, is included to receive the light pulse produced by the flash lamp and efficiently deliver the light pulse to a selected hair follicle to effect the photo-thermal epilation of the associated growth support tissue.

US Patent:

6719753, Apr 13, 2004

Filed:

Jun 22, 2002

Appl. No.:

10/177971

Inventors:

Howard Stephen Bertan - Jericho NY 11753
Kenneth Lawrence Short - Setauket NY 11733

International Classification:

A61B 1818

US Classification:

606 9, 315200 A, 315214, 315241 R, 315244

Abstract:

A method and structure for energizing a flash lamp for producing a high energy light pulse, with the flash lamp energized by a flattened and extended current pulse. The method includes collecting and storing energy for delivery to the flash lamp when triggered. A triggering of the flash lamp resulting in a delivering of the collected and stored energy to the flash lamp in the form of an amplitude controlled (flattened) and duration controlled (extended) current pulse.

US Patent:

6916315, Jul 12, 2005

Filed:

Oct 7, 2002

Appl. No.:

10/265965

Inventors:

Kenneth Lawrence Short - Setauket NY, US
Howard Stephen Bertan - Jericho NY, US

International Classification:

A61B018/18

US Classification:

606 9, 606 10, 606 12, D14383, D14388, 705 72

Abstract:

Methods of operating and logging the usage of a photo-thermal epilation apparatus provide for the logging of usage information as the apparatus is employed for each epilation session. The operational information may be applied to determine when calibration is required, if additional usage funds must be paid before additional sessions may be conducted, and or when and who conducted epilation sessions with the apparatus. A usage log may be stored within a database that contains entries of operation or usage information. Each usage log entry may include information associated with a client, an operator, as well as other useful information related to the usage of the apparatus. The apparatus may further be configured to communicate with at least one remote computer. The communication with the remote computer may be included for enabling operation and usage of the apparatus to be metered, monitored, and or purchased in pre-determined usage allotments.

US Patent:

20040105399, Jun 3, 2004

Filed:

Nov 20, 2002

Appl. No.:

10/301350

Inventors:

Thomas Robertazzi - Mastic NY, US
Sangjin Hong - South Setauket NY, US
Kenneth Short - Setauket NY, US

International Classification:

H04B007/00

US Classification:

370/310000

Abstract:

A robust radio device and method of communication capable of performing in extreme environments such as during a disaster are disclosed. The robust radio device and method of communication include a radio enclosed in a durable enclosure which is capable of participating in an ad-hoc network.

US Patent:

50533835, Oct 1, 1991

Filed:

Mar 29, 1988

Appl. No.:

7/174577

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

B05D 512
B05D 306

US Classification:

505 1

Abstract:

The critical current density J. sub. c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T. sub. c (R. dbd. 0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e. g. , 1 MeV) ions. The ability to tailor J. sub. c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

US Patent:

47496606, Jun 7, 1988

Filed:

Nov 26, 1986

Appl. No.:

6/935273

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2120

US Classification:

437 24

Abstract:

We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature 1200. degree. C. ) anneal, a randomizing implant (. about. 5. times. 10. sup. 14 Si/cm. sup. 2, nominal wafer temperature

US Patent:

51224798, Jun 16, 1992

Filed:

Apr 11, 1991

Appl. No.:

7/683891

Inventors:

Sarah A. Audet - Bridgewater NJ
Conor S. Rafferty - Basking Ridge NJ
Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437200

Abstract:

Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer. The silicide preferably is CoSi. sub. 2 or TiSi. sub. 2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e. g. ,

US Patent:

48164216, Mar 28, 1989

Filed:

Nov 24, 1986

Appl. No.:

6/934160

Inventors:

Robert C. Dynes - Summit NJ
Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2128

US Classification:

437 26

Abstract:

Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e. g. , Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e. g. , Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e. g. , CoSi. sub. 2) is formed. Exemplarily, 3. multidot. 10. sup. 17 /cm. sup. 2 200 keV Co ions are implanted into (100) Si nominally at 350. degree. C. , followed by a heat treatment that consists of 1 hour at 600. degree. C. and 30 minutes at 1000. degree. C. The resulting buried CoSi. sub.