Kenneth D Short

US Patent:

7288981, Oct 30, 2007

Filed:

Jan 12, 2006

Appl. No.:

11/275538

Inventors:

Kenneth Dean Short - Essex Junction VT, US
Pradeep Thiagarajan - South Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H03L 5/00
G05F 1/10

US Classification:

327333, 327536

Abstract:

A voltage translator circuit and a method for operating the same. The voltage translator circuit includes (a) an input node, an output node, and a ground node; (b) a voltage divider circuit including a first and second resistors coupled in series between the input node and the ground node; (c) a start voltage circuit coupled to a first voltage and to the input node; (d) a transfer circuit coupled to the output node; and (e) a capacitive circuit having a first and second capacitive nodes. The first capacitive node is coupled to the voltage divider circuit. The second capacitive node is coupled (i) to the first voltage via the start voltage circuit, and (ii) to the output node via the transfer circuit. In response to the input node changing towards the first voltage, the start voltage circuit is capable of disconnecting the second capacitive node from the first voltage.

US Patent:

55414427, Jul 30, 1996

Filed:

Aug 31, 1994

Appl. No.:

8/298685

Inventors:

Richard F. Keil - Jonesville VT
Ram Kelkar - South Burlington VT
Ilya I. Novof - Essex Junction VT
Jeffery H. Oppold - Richmond VT
Kenneth D. Short - Essex Junction VT
Stephen D. Wyatt - Jericho VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2900

US Classification:

257533

Abstract:

An improved configuration of a capacitor formed with FET technology and a resistor and/or conductor is provided. In this configuration a capacitor is formed in which the diffusion zone of the substrate is used as one plate of the capacitor and what would normally be the gate electrode of an FET is used as the other plate of the capacitor, with the two plates being separated by a conventional thin dielectric gate oxide layer. An insulator, such as silicon dioxide overlays the gate electrode, and electrical connections to the gate electrode and diffusion zone are made through the insulator to allow the two plates of the capacitor to be connected to various devices or components as required. The top surface of this insulation layer is also used to form metal resistors. Depending on the value of required resistance, a second insulating layer may be used and a second level of metal used to connect segments of the resistors formed on the first layer of metal to form a longer resistor.