Kenneth Ray Short

US Patent:

50533835, Oct 1, 1991

Filed:

Mar 29, 1988

Appl. No.:

7/174577

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

B05D 512
B05D 306

US Classification:

505 1

Abstract:

The critical current density J. sub. c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T. sub. c (R. dbd. 0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e. g. , 1 MeV) ions. The ability to tailor J. sub. c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

US Patent:

47496606, Jun 7, 1988

Filed:

Nov 26, 1986

Appl. No.:

6/935273

Inventors:

Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2120

US Classification:

437 24

Abstract:

We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature 1200. degree. C. ) anneal, a randomizing implant (. about. 5. times. 10. sup. 14 Si/cm. sup. 2, nominal wafer temperature

US Patent:

51224798, Jun 16, 1992

Filed:

Apr 11, 1991

Appl. No.:

7/683891

Inventors:

Sarah A. Audet - Bridgewater NJ
Conor S. Rafferty - Basking Ridge NJ
Kenneth T. Short - New Providence NJ
Alice E. White - New Providence NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437200

Abstract:

Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer. The silicide preferably is CoSi. sub. 2 or TiSi. sub. 2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e. g. ,