Kenneth T. Short - New Providence NJ Alice E. White - New Providence NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
B05D 512 B05D 306
US Classification:
505 1
Abstract:
The critical current density J. sub. c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T. sub. c (R. dbd. 0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e. g. , 1 MeV) ions. The ability to tailor J. sub. c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.
Method Of Making An Article Comprising A Buried Sio.sub.2 Layer
Kenneth T. Short - New Providence NJ Alice E. White - New Providence NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21265 H01L 2120
US Classification:
437 24
Abstract:
We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature 1200. degree. C. ) anneal, a randomizing implant (. about. 5. times. 10. sup. 14 Si/cm. sup. 2, nominal wafer temperature
Method Of Making A Heteroepitaxial Structure By Mesotaxy Induced By Buried Implantation
Robert C. Dynes - Summit NJ Kenneth T. Short - New Providence NJ Alice E. White - New Providence NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21265 H01L 2128
US Classification:
437 26
Abstract:
Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e. g. , Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e. g. , Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e. g. , CoSi. sub. 2) is formed. Exemplarily, 3. multidot. 10. sup. 17 /cm. sup. 2 200 keV Co ions are implanted into (100) Si nominally at 350. degree. C. , followed by a heat treatment that consists of 1 hour at 600. degree. C. and 30 minutes at 1000. degree. C. The resulting buried CoSi. sub.
Name / Title
Company / Classification
Phones & Addresses
Kenneth R Short
BRADKEN SPORTS APPAREL & EQUIPMENT LLC
Kenneth R Short
ALL SPORTS APPAREL LLC
Kenneth Short Treasurer
Castillo Mechanical General Contractors Single-Family House Construction