Kenneth L Starks

US Patent:

20060124155, Jun 15, 2006

Filed:

Sep 30, 2005

Appl. No.:

11/239000

Inventors:

David Suuronen - Newburyport MA, US
Arthur Riaf - Gloucester MA, US
Paul Buccos - Haverhill MA, US
Kevin Daniels - Wakefield MA, US
Paul Murphy - Reading MA, US
Lawrence Ficarra - Billerica MA, US
Kenneth Starks - Gloucester MA, US

International Classification:

B08B 3/02

US Classification:

134033000, 134034000, 13405600R, 134172000, 134902000

Abstract:

A technique for reducing backside particles is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for reducing backside particles. The apparatus may comprise a delivery mechanism configured to supply a cleaning substance to a platen, wherein the platen is housed in a process chamber. The apparatus may also comprise a control unit configured to cause the process chamber to reach a first pressure level, cause the cleaning substance to be supplied to a surface of the platen, and cause the process chamber to reach a second pressure level, thereby removing contaminant particles, together with the cleaning substance, from the surface of the platen.

US Patent:

20190276931, Sep 12, 2019

Filed:

Mar 8, 2019

Appl. No.:

16/296718

Inventors:

- Santa Clara CA, US
Anantha K. Subramani - SAN JOSE CA, US
Joung Joo Lee - SAN JOSE CA, US
Farzad Houshmand - MOUNTAIN VIEW CA, US
Kelvin Chan - SAN RAMON CA, US
Kenneth Starks - Gloucester MA, US
Xianmin Tang - SAN JOSE CA, US

International Classification:

C23C 14/54
H01L 21/02
H01L 21/285
C23C 14/50
C23C 14/34

Abstract:

Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the linear PVD source, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is perpendicular to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move over a working surface of the substrate disposed on the substrate support during operation.

US Patent:

20190006587, Jan 3, 2019

Filed:

Jun 30, 2017

Appl. No.:

15/639029

Inventors:

- Gloucester MA, US
Raees Pervaiz - Hampton NH, US
Kenneth Starks - Gloucester MA, US
Shurong Liang - Lynnfield MA, US
Tyler Rockwell - Wakefield MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01L 45/00
H01J 37/32
H01L 21/67

Abstract:

A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

US Patent:

20180090297, Mar 29, 2018

Filed:

Nov 27, 2017

Appl. No.:

15/822894

Inventors:

- Gloucester MA, US
Brant S. Binns - Beverly MA, US
Richard M. White - Newmarket NH, US
Kenneth L. Starks - Gloucester MA, US
Eric R. Cobb - Danvers MA, US

International Classification:

H01J 37/30
H01J 37/08
H01J 37/317

Abstract:

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

US Patent:

20170178857, Jun 22, 2017

Filed:

Dec 22, 2015

Appl. No.:

14/977720

Inventors:

- Gloucester MA, US
Brant S. Binns - Beverly MA, US
Richard M. White - Newmarket NH, US
Kenneth L. Starks - Gloucester MA, US
Eric R. Cobb - Danvers MA, US

International Classification:

H01J 37/30
H01J 37/317
H01J 37/08

Abstract:

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.