Kenneth R Thomson

US Patent:

20120104359, May 3, 2012

Filed:

Nov 8, 2011

Appl. No.:

13/291922

Inventors:

Andrew Felker - Livermore CA, US
Nicholas A. Vickers - Hayward CA, US
Rafael Aldaz - Pleasanton CA, US
David Press - San Francisco CA, US
Nicholas J. Pfister - Goleta CA, US
James W. Raring - Goleta CA, US
Mathew C. Schmidt - Goleta CA, US
Kenneth John Thomson - San Francisco CA, US

Assignee:

Soraa, Inc. - Fremont CA

International Classification:

H01L 33/06
H01L 33/32

US Classification:

257 14, 438 33, 257E33008, 257E33025

Abstract:

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

US Patent:

20230095386, Mar 30, 2023

Filed:

Nov 9, 2022

Appl. No.:

18/054030

Inventors:

- San Jose CA, US
Kenneth J. THOMSON - San Francisco CA, US

International Classification:

H01S 5/10
H01S 5/026
H01S 5/22
H01S 5/34
H01S 5/065

Abstract:

An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

US Patent:

20200287346, Sep 10, 2020

Filed:

Mar 6, 2019

Appl. No.:

16/294634

Inventors:

- San Jose CA, US
Kenneth J. THOMSON - San Francisco CA, US

International Classification:

H01S 5/026
H01S 5/22
H01S 5/34

Abstract:

An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

US Patent:

20200124794, Apr 23, 2020

Filed:

Jun 6, 2019

Appl. No.:

16/433846

Inventors:

- San Jose CA, US
Kenneth J. THOMSON - San Francisco CA, US
Dominic F. SIRIANI - Allentown PA, US

International Classification:

G02B 6/122
G02B 6/13

Abstract:

Embodiments provide for a photonic platform, comprising: a silicon component; a III-V component; and a bonding layer contacting the silicon component on one side and the III-V component on the opposite side; wherein the silicon component comprises: a silicon substrate; a dielectric, contacting the silicon substrate on one face and the bonding layer on the opposite face; a silicon cores disposed in the dielectric; and wherein the III-V component comprises: a III-V cladding; a III-V contact, having a first side that contacts the bonding layer; and an active region, disposed on the III-V contact and separating the III-V contact from the III-V cladding, wherein the active region is located relative to the silicon cores to define an optical path that includes the active region and the silicon cores.

US Patent:

20200127438, Apr 23, 2020

Filed:

Mar 26, 2019

Appl. No.:

16/364994

Inventors:

- San Jose CA, US
Kenneth J. THOMSON - San Francisco CA, US
Dominic F. SIRIANI - Allentown PA, US

International Classification:

H01S 5/02
H01S 5/10

Abstract:

The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

US Patent:

20150357513, Dec 10, 2015

Filed:

Aug 17, 2015

Appl. No.:

14/827709

Inventors:

- FREMONT CA, US
KENNETH JOHN THOMSON - FREMONT CA, US

International Classification:

H01L 33/00
H01L 33/22
H01L 33/38

Abstract:

A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

US Patent:

20150171276, Jun 18, 2015

Filed:

Feb 23, 2015

Appl. No.:

14/629049

Inventors:

- Fremont CA, US
Kenneth Jonh Thomson - Fremont CA, US

International Classification:

H01L 33/40
H01L 33/00

Abstract:

A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

US Patent:

20150014695, Jan 15, 2015

Filed:

Jul 9, 2013

Appl. No.:

13/937338

Inventors:

- Fremont CA, US
KENNETH JOHN THOMSON - FREMONT CA, US

International Classification:

H01L 33/32
H01L 33/22

US Classification:

257 76, 438 34

Abstract:

A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.