Andrew Felker - Livermore CA, US Nicholas A. Vickers - Hayward CA, US Rafael Aldaz - Pleasanton CA, US David Press - San Francisco CA, US Nicholas J. Pfister - Goleta CA, US James W. Raring - Goleta CA, US Mathew C. Schmidt - Goleta CA, US Kenneth John Thomson - San Francisco CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 33/06 H01L 33/32
US Classification:
257 14, 438 33, 257E33008, 257E33025
Abstract:
A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
Contacts For An N-Type Gallium And Nitrogen Substrate For Optical Devices
- FREMONT CA, US KENNETH JOHN THOMSON - FREMONT CA, US
International Classification:
H01L 33/00 H01L 33/22 H01L 33/38
Abstract:
A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
Contacts For An N-Type Gallium And Nitrogen Substrate For Optical Devices
- Fremont CA, US Kenneth Jonh Thomson - Fremont CA, US
International Classification:
H01L 33/40 H01L 33/00
Abstract:
A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
Contacts For An N-Type Gallium And Nitrogen Substrate For Optical Devices
- Fremont CA, US KENNETH JOHN THOMSON - FREMONT CA, US
International Classification:
H01L 33/32 H01L 33/22
US Classification:
257 76, 438 34
Abstract:
A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
Wayne Burgett, Karen Farrier, Norm Harley, Don Hoge, Leon Cotton, Harold Farrier, Roger Harley, Rexene Sigman, Navonne Schmidt, Norma Weller, Bernice Sudduth