Kenric T Choi

US Patent:

7794544, Sep 14, 2010

Filed:

Oct 26, 2007

Appl. No.:

11/925684

Inventors:

Son T. Nguyen - San Jose CA, US
Kedarnath Sangam - Sunnyvale CA, US
Miriam Schwartz - Los Gatos CA, US
Kenric Choi - Santa Clara CA, US
Sanjay Bhat - Bangalore, IN
Pravin K. Narwankar - Sunnyvale CA, US
Shreyas Kher - Campbell CA, US
Rahul Sharangapani - Fremont CA, US
Shankar Muthukrishnan - San Jose CA, US
Paul Deaton - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
E03B 1/00
F17D 1/00
F15C 1/16

US Classification:

118715, 137 8, 137808

Abstract:

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

US Patent:

7976631, Jul 12, 2011

Filed:

Oct 16, 2007

Appl. No.:

11/873132

Inventors:

Brian H. Burrows - San Jose CA, US
Alexander Tam - Union City CA, US
Ronald Stevens - San Ramon CA, US
Kenric T. Choi - Santa Clara CA, US
James D. Felsch - Santa Clara CA, US
Jacob Grayson - Santa Clara CA, US
Sumedh Acharya - Santa Clara CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US
Nyi O. Myo - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/455
H01L 21/306
H01L 21/3065

US Classification:

118715, 15634533, 15634534

Abstract:

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

US Patent:

8137468, Mar 20, 2012

Filed:

Mar 17, 2009

Appl. No.:

12/405692

Inventors:

Kenric T. Choi - San Jose CA, US
Son T. Nguyen - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

118724, 42725528

Abstract:

Embodiments of the invention provide an apparatus and a method for generating a gaseous chemical precursor that may be used in a vapor deposition processing system. In one embodiment, the apparatus contains a valve manifold assembly, which includes a valve assembly body having at least one embedded electric heater, an inlet channel passing through the valve assembly body, a first pneumatic valve and a first manual valve coupled to the valve assembly body and positioned to control fluid flow within the inlet channel, an outlet channel passing through the valve assembly body, and a second pneumatic valve and a second manual valve coupled to the valve assembly body and positioned to control fluid flow within the outlet channel. The valve manifold assembly further contains a bypass channel connected to and between the inlet and outlet channels, and containing a bypass valve positioned to control fluid flow within the bypass channel.

US Patent:

8309874, Nov 13, 2012

Filed:

May 16, 2008

Appl. No.:

12/122616

Inventors:

Tao Hou - Palo Alto CA, US
Son T. Nguyen - San Jose CA, US
Kenric Choi - San Jose CA, US
Anh N. Nguyen - Milpitas CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 1/00

US Classification:

219 50, 219201, 219494, 165287, 165181, 159 7, 159 132, 422198

Abstract:

A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.

US Patent:

8343279, Jan 1, 2013

Filed:

May 12, 2005

Appl. No.:

11/127753

Inventors:

Nyi Oo Myo - Campbell CA, US
Kenric Choi - Santa Clara CA, US
Shreyas Kher - Campbell CA, US
Pravin Narwankar - Sunnyvale CA, US
Steve Poppe - Pleasanton CA, US
Craig R. Metzner - Fremont CA, US
Paul Deaten - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

118724, 118723 MW, 118729

Abstract:

Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic.

US Patent:

8481118, Jul 9, 2013

Filed:

Jul 12, 2011

Appl. No.:

13/181431

Inventors:

Brian H. Burrows - San Jose CA, US
Alexander Tam - Union City CA, US
Ronald Stevens - San Ramon CA, US
Kenric T. Choi - Santa Clara CA, US
James D. Felsch - Santa Clara CA, US
Jacob Grayson - Santa Clara CA, US
Sumedh Acharya - Santa Clara CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US
Nyi O. Myo - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/06
C23C 16/08
C23C 16/455

US Classification:

427250, 427252, 427253, 42725523, 42725528, 118715

Abstract:

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

US Patent:

20050252449, Nov 17, 2005

Filed:

Apr 29, 2005

Appl. No.:

11/119388

Inventors:

Son Nguyen - San Jose CA, US
Kedarnath Sangam - Sunnyvale CA, US
Miriam Schwartz - Los Gatos CA, US
Kenric Choi - Santa Clara CA, US
Sanjay Bhat - Bangalore, IN
Pravin Narwankar - Sunnyvale CA, US
Shreyas Kher - Campbell CA, US
Rahul Sharangapani - Fremont CA, US
Shankar Muthukrishnan - San Jose CA, US
Paul Deaton - San Jose CA, US

International Classification:

C23C016/00

US Classification:

118715000, 427248100

Abstract:

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

US Patent:

20080099933, May 1, 2008

Filed:

Oct 31, 2006

Appl. No.:

11/554954

Inventors:

Kenric T. Choi - Santa Clara CA, US
Pravin K. Narwankar - Sunnyvale CA, US
Shreyas S. Kher - Campbell CA, US
Son T. Nguyen - San Jose CA, US
Paul Deaton - San Jose CA, US
Khai Ngo - Cedar Park TX, US
Paul Chhabra - Austin TX, US
Alan H. Ouye - San Mateo CA, US
Dien-Yeh (Daniel) Wu - San Jose CA, US

International Classification:

F16K 13/00
B01F 3/04

US Classification:

261 52, 261136, 261 43, 261127

Abstract:

A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.