Kevin A Calhoun

US Patent:

53770722, Dec 27, 1994

Filed:

Jan 10, 1994

Appl. No.:

8/179275

Inventors:

Aubrey K. Sparkman - Austin TX
Kevin A. Calhoun - Austin TX
Jonathan C. Dahm - Austin TX
Joseph M. Haas - Austin TX
Rolando J. Osorio - Manchacha TX

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H01G 103
H01G 410
H01G 438

US Classification:

3613062

Abstract:

A single metal-plate bypass capacitor (10) includes a metal top plate (26) separated from a silicon substrate (12) by a thermally-grown, silicon dioxide dielectric (16) layer. An additional silicon plate (36) can be included intermediate to the metal top plate (26) and the silicon substrate (12) for multiple power supply devices. The silicon substrate (12) is electrically accessed through a metal contact pad (28) overlying a doped region (34) of the silicon substrate (12). The metal contact pad (28) is electrically isolated from the top plate (26) by an isolation structure (30). The bypass capacitor (10) is designed to be attached directly to the top surface of a semiconductor device (18), which enables the bypass capacitor (10) to be interconnected to the semiconductor device (18) by a plurality of bonding wires (25) having a minimal length. Because the capacitor dielectric (16) is formed as a very thin layer by the thermal oxidation of silicon, the self-inductance of bypass capacitor (10) is minimized.