Kevin M Devereaux from 1148 Beaverslide Rd, Kamiah, ID 83536, age 64, Phone: 2089357812

Us Patents

Radio Frequency Data Communications Device
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US Patent:

6337634, Jan 8, 2002
Filed:

Sep 10, 1998
Appl. No.:

09/151358
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Colorado Springs CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H04Q 100
US Classification:

34082556, 340 105
Abstract:

A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Stage Having Controlled Variable Resistance Load Circuit For Use In Voltage Controlled Ring Oscillator
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US Patent:

6351190, Feb 26, 2002
Filed:

May 9, 2000
Appl. No.:

09/568085
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Chipita Park CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H03B 502
US Classification:

331 57, 331177 R
Abstract:

A stage for a voltage controlled oscillator includes a first p-channel transistor having a gate defining a control node, having a source adapted to be coupled to a supply voltage, and having a drain; a second p-channel transistor having a gate coupled to the control node, having a source coupled to the supply voltage, and having a drain; a first n-channel transistor having a gate defining a first input, having a drain coupled to the drain of the first p-channel transistor and defining a first node, and having a source; a second n-channel transistor having a gate defining a second input, having a drain coupled to the drain of the second p-channel transistor and defining a second node, and having a source; a current draw; first and second loads; a first source follower having an input coupled to the first node; and a second source follower.

Radio Frequency Data Communications Device
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US Patent:

6384648, May 7, 2002
Filed:

Apr 14, 2000
Appl. No.:

09/550647
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Colorado Springs CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H03L 7099
US Classification:

327156, 331 57
Abstract:

A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Integrated Circuit Having Forced Substrate Test Mode With Improved Substrate Isolation
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US Patent:

6388926, May 14, 2002
Filed:

Jul 27, 1999
Appl. No.:

09/361009
Inventors:

Dean Gans - Boise ID
Kevin Devereaux - Boise ID
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

G11C 2900
US Classification:

365201, 3241581
Abstract:

An integrated circuit is described which includes a test mode circuit that allows a substrate of the integrated circuit to be forced to a voltage level dictated by an external connection during a test operation, and provides an improved substrate isolation from the external connection during non-test operations. Both n-channel transistor and p-channel transistor isolation circuit embodiments are described. An integrated circuit memory device is described which incorporated the test mode and isolation circuits. The external connection can be coupled to a negative voltage during non-test operation which is more negative than a threshold voltage below a substrate voltage without inadvertently coupling the external connection and substrate together.

Radio Frequency Data Communications Device
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US Patent:

6466634, Oct 15, 2002
Filed:

Sep 28, 1998
Appl. No.:

09/161512
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Colorado Springs CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H03D 324
US Classification:

375374, 340 101
Abstract:

A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Method Of Making A Schottky Diode In An Integrated Circuit
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US Patent:

6492192, Dec 10, 2002
Filed:

Sep 11, 1998
Appl. No.:

09/151936
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Chipita Park CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 2100
US Classification:

438 57, 438 73
Abstract:

A method of forming an integrated circuit including a Schottky diode includes providing a substrate of a first conductivity type, defining a region of a second conductivity type relative to the substrate and forming an insulator over the second conductivity type region. The method also includes removing an area of the insulator for definition of a contact hole, and removing an area encircling the contact hole and forming highly doped regions of the second conductivity type in second conductivity type regions encircling the contact hole. The method further includes depositing a Schottky metal in the contact hole and annealing the metal to form a suicide interface to the second conductivity type region.

Radio Frequency Data Communications Device
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US Patent:

6600428, Jul 29, 2003
Filed:

Sep 10, 1998
Appl. No.:

09/151359
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Colorado Springs CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H04Q 700
US Classification:

34082536
Abstract:

A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

Radio Frequency Data Communications Device
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US Patent:

6696879, Feb 24, 2004
Filed:

Nov 22, 2000
Appl. No.:

09/718325
Inventors:

James E. OToole - Boise ID
John R. Tuttle - Boise ID
Mark E. Tuttle - Boise ID
Tyler Lowrey - Boise ID
Kevin M. Devereaux - Boise ID
George E. Pax - Boise ID
Brian P. Higgins - Boise ID
David K. Ovard - Meridian ID
Robert R. Rotzoll - Colorado Springs CO
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

G06F 744
US Classification:

327356, 327359
Abstract:

A frequency doubler includes a first Gilbert cell, a second Gilbert cell coupled to the first Gilbert cell, a frequency generator configured to apply a first sinusoidal wave to the first Gilbert cell, and a phase shifter applying a sinusoidal wave shifted from the first sinusoidal wave to the second Gilbert cell. A method of doubling frequency without using a feedback loop includes providing a first Gilbert cell, providing a second Gilbert cell coupled to the first Gilbert cell, applying a first sinusoidal wave to the first Gilbert cell, and applying a sinusoidal wave shifted from the first sinusoidal wave to the second Gilbert cell.