Kevin T Robinson

US Patent:

20030133637, Jul 17, 2003

Filed:

Jan 16, 2002

Appl. No.:

10/050244

Inventors:

Zhenan Bao - Jersey City NJ, US
Christopher Bower - New Providence NJ, US
Sungho Jin - Millington NJ, US
Kevin Robinson - Zionsville PA, US
Yiu-Man Wong - Wescosville PA, US
Wei Zhu - Warren NJ, US

International Classification:

G02B006/10

US Classification:

385/002000, 385/129000

Abstract:

An electrooptic device and method for making the same, including one or more of substrate, a buffer layer, a charge dissipation layer, and electrodes. An F containing active trapping layer is deposited at the substrate/buffer interface, within the buffer layer, and/or on top of the buffer layer. The active F ions in the F containing active trapping layer react with positive ions, such as Li from the substrate to form stable compounds such as LiF. Porous material such as carbon nanotubes may be used in place of or in addition to the F containing active trapping layer. The reduced number of Li ions reduces the DC drift of the associated electrooptic device. The profile of the implanted ions may be adjusted to control and/or optimize the properties of the electrooptic device. Fluorine is particularly advantageous because it also lowers the dielectric constant thereby facilitating higher frequency operation.