Kevin C Stark

US Patent:

6431003, Aug 13, 2002

Filed:

Sep 6, 2000

Appl. No.:

09/656202

Inventors:

Kevin C. Stark - Richmond Heights OH
Christopher A. Bang - San Diego CA

Assignee:

Rosemount Aerospace Inc. - Burnsville MN

International Classification:

G01L 912

US Classification:

73718

Abstract:

A pressure sensor for measuring the differential pressure of a first and a second fluid. The sensor includes a housing having an internal opening, a first diaphragm disposed in the opening and exposed to the first fluid, and a second diaphragm disposed in the opening and exposed to the second fluid. The first diaphragm and the second diaphragm are each made of a conductive material and coupled together such that the differential pressure of the first and second fluids deflects the first and second diaphragms in the same direction. The deflection of the first and second diaphragms can be sensed to determine the differential pressure.

US Patent:

6444487, Sep 3, 2002

Filed:

Feb 5, 1999

Appl. No.:

09/245272

Inventors:

Bradley J. Boggs - Mentor OH
Marcus S. Just - Parma OH
Kevin C. Stark - Richmond Heights OH
Christopher A. Bang - North Royalton OH

Assignee:

Rosemount Aerospace Inc. - Burnsville MN

International Classification:

H01L 2100

US Classification:

438 48, 438 50, 438459

Abstract:

A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

US Patent:

6912759, Jul 5, 2005

Filed:

Jul 20, 2001

Appl. No.:

09/909847

Inventors:

Alain Izadnegahdar - Orange Village OH, US
James Siekkinen - Bay Village OH, US
Horacio V. Estrada - Beachwood OH, US
Brad Boggs - Mentor OH, US
Michael Nagy - Lakewood OH, US
Kevin Stark - Richmond Heights OH, US

Assignee:

Rosemount Aerospace Inc. - Burnsville MN

International Classification:

H04R017/00

US Classification:

29 2535, 296101, 216 56, 216 99, 438 53, 438330, 438381

Abstract:

A method for forming a sensor including the steps of providing a base wafer and forming a sensor cavity in the base wafer. The method further includes the step of coupling a diaphragm wafer to the base wafer, the diaphragm wafer including a diaphragm portion and a sacrificial portion. The diaphragm wafer is coupled to the base wafer such the diaphragm portion generally covers the sensor cavity. The method further includes the steps of reducing the thickness of the diaphragm wafer by removing the sacrificial portion, and forming or locating at least one piezo resistive portion on the diaphragm portion.

US Patent:

20020097118, Jul 25, 2002

Filed:

Apr 11, 2001

Appl. No.:

09/833174

Inventors:

James Siekkinen - Bay Village OH, US
Chris Apanius - South Euclid OH, US
Brad Boggs - Mentor OH, US
Kevin Stark - Richmond Heights OH, US
Xiaofeng Yang - Broadview Heights OH, US
Christopher Bang - San Diego CA, US

International Classification:

H01H051/22

US Classification:

335/078000

Abstract:

A switch including a first and a second conductor and a transducer. The switch includes a base and an actuator coupled to the base. The actuator includes an actuating surface and a coil located thereon such that when the switch is located in a magnetic field and a sufficient current is passed through the coil, the actuator is displaced relative to the base to an actuating position wherein the actuating surface causes the first and second conductors to be electrically coupled.

US Patent:

20020179985, Dec 5, 2002

Filed:

Jul 9, 2002

Appl. No.:

10/191176

Inventors:

Bradley Boggs - Mentor OH, US
Marcus Just - Parma OH, US
Kevin Stark - Richmond Heights OH, US
Christopher Bang - North Royalton OH, US

International Classification:

H01L029/82

US Classification:

257/417000

Abstract:

A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

US Patent:

20030037590, Feb 27, 2003

Filed:

Aug 27, 2001

Appl. No.:

09/940408

Inventors:

Kevin Stark - Richmond Heights OH, US

International Classification:

G01N031/10

US Classification:

073/001030, 073/001060

Abstract:

A method of self-testing a semiconductor chemical gas sensor comprises the steps of: applying power to a heating element; obtaining a measurement from a temperature sensing element; adjusting the power applied to the heating element until the obtained measurement from the temperature sensing element reaches a desired measurement; obtaining a measurement from a gas sensitive element when the desired measurement is reached; and comparing the obtained measurement from the gas sensitive element to a reference measurement. An alternate method comprises the steps of: applying power to the heating element; obtaining measurements from the gas sensitive element and the temperature sensing element; adjusting the power applied to the heating element to cause a change in the obtained measurement from the temperature sensing element and obtaining a change in measurement from the gas sensitive element; and determining if the obtained change in gas measurement is consistent with the change in temperature measurement. Both methods may be performed in air and/or at ambient temperature.

US Patent:

61719722, Jan 9, 2001

Filed:

Nov 13, 1998

Appl. No.:

9/191966

Inventors:

Mehran Mehregany - Pepper Pike OH
Christopher A. Bang - North Royalton OH
Kevin C. Stark - Richmond Heights OH

Assignee:

Rosemount Aerospace Inc. - Burnsville MN

International Classification:

H01L 2100

US Classification:

438719

Abstract:

A method for forming micromachined devices out of a polycrystalline silicon substrate using deep reactive ion etching to form the micromachined device. The method comprises the steps of providing a bulk material substrate of polycrystalline silicon, and etching the bulk material using deep reactive ion etching to form the micromachined device. The present invention also includes a method for forming a micromachined device comprising the steps of providing a first layer of single crystal silicon and etching a first set of elements on the first layer. The method further includes the steps of providing a second layer of single crystal silicon, etching a second set of elements on the second layer, and joining the first and second layers together such that the crystal planes of the first layer and the second layer are misaligned and such that the first set and the second set of elements are properly aligned.