Kimberly L Pritchard

US Patent:

6798644, Sep 28, 2004

Filed:

Jul 10, 2003

Appl. No.:

10/617156

Inventors:

James L. Piller - Simpsonville SC
Philip Michael Lessner - Simpsonville SC
Randolph Stephen Hahn - Simpsonville SC
Carole C. Eppes - Simpsonville SC
Kimberly Lynn Pritchard - Mauldin SC

Assignee:

Kemet Electronics Corporation - Greenville SC

International Classification:

H01G 904

US Classification:

361528, 29 2503

Abstract:

A solid electrolytic capacitor with improved ESR before and after mounting on a circuit board is obtained by forming a cathode on a dielectric layer using a conductive polymer, especially an intrinsically conductive polymer. The polymer is then coated with graphetized carbon by dipping in a suspension thereof. After drying, the carbon is infused and coated at least once with a second conductive polymer layer before a conductive paint such as âdipping silverâ is applied and the capacitor encapsulated by a transfer molding process. The application of a second conductive polymer layer improves the ESR by filling voids in the carbon layer and improves adhesion of the carbon.

US Patent:

6804109, Oct 12, 2004

Filed:

Oct 20, 2003

Appl. No.:

10/689142

Inventors:

Randolph S. Hahn - Simpsonville SC
Brian J. Melody - Greer SC
John T. Kinard - Greer SC
Kimberly L. Pritchard - Mauldin SC
Elisabeth Crittendon Key - Greenville SC

Assignee:

Kemet Electronics Corporation - Greenville SC

International Classification:

H01G 406

US Classification:

361524, 361525, 29 2503

Abstract:

A solid electrical capacitor having lowered ESR and fewer short circuit from processing is obtained by adhering a number of islands of a material more basic than the dielectric coating on an anode before forming a conductive polymer on the dielectric coating by a chemical oxidation process.

US Patent:

20050278915, Dec 22, 2005

Filed:

Jun 18, 2004

Appl. No.:

10/871782

Inventors:

Guy VanNatta - Greenville SC, US
Randolph Hahn - Simpsonville SC, US
Chris Wayne - Spartanburg SC, US
Kimberly Pritchard - Mauldin SC, US
Keith Brenneman - Simpsonville SC, US

International Classification:

H01G009/00

US Classification:

029025030

Abstract:

A process for forming a capacitor. The process includes the steps of forming an anode of a valve metal. A dielectric layer is formed on the valve metal. A conducting layer is formed on the dielectric layer wherein the conducting layer is the cathode. A carbon layer is sprayed onto the conducting layer and a silver layer is sprayed onto the on the conducting layer.

US Patent:

20060157821, Jul 20, 2006

Filed:

Mar 8, 2006

Appl. No.:

11/370762

Inventors:

Guy VanNatta - Greenville SC, US
Randolph Hahn - Simpsonville SC, US
Chris Wayne - Spartanburg SC, US
Kimberly Pritchard - Mauldin SC, US
Keith Brenneman - Simpsonville SC, US

International Classification:

H01L 29/00

US Classification:

257532000

Abstract:

A process for forming a capacitor. The process includes the steps of forming an anode of a valve metal. A dielectric layer is formed on the valve metal. A conducting layer is formed on the dielectric layer wherein the conducting layer is the cathode. A carbon layer is sprayed onto the conducting layer and a silver layer is sprayed onto the on the conducting layer.

US Patent:

63044277, Oct 16, 2001

Filed:

Jan 7, 2000

Appl. No.:

9/479211

Inventors:

Erik Karlsen Reed - Mauldin SC
James Charles Marshall - Simpsonville SC
Kimberly Lynn Pritchard - Mauldin SC
Jothi Rajasekaran - Greenville SC

Assignee:

Kemet Electronics Corporation - Greenville SC

International Classification:

H01G 900

US Classification:

361523

Abstract:

Single element and/or multiple element valve-metal, solid-electrolyte, surface-mount capacitors are manufactured using one or more materials taken from the following three categories of materials: graphitic carbon, highly-conductive metal-powder-filled paint, and metallic terminals. The resulting capacitors have lower equivalent series resistance (ESR) at 100 kHz than do similar capacitors manufactured with conventional materials and with conventional techniques. Moreover, not only do these devices possess lower "as-manufactured" ESR, but also their ESR is substantially more stable (less increase in ESR) when these devices are exposed to IR reflow temperatures, high humidity, thermal shock, 1000 hours at 150. degree. C. , and 1000 hours at 175. degree. C.