Kristin R Shepperd

US Patent:

20110318257, Dec 29, 2011

Filed:

Dec 16, 2010

Appl. No.:

12/970750

Inventors:

Denis Aleksandrovich Sokolov - Atlanta GA, US
Kristin Rene Shepperd - Conyers GA, US
Thomas Michael Orlando - Atlanta GA, US

Assignee:

Georgia Tech Research Corporation - ATLANTA GA

International Classification:

C01B 31/00
B01J 19/12
B01J 19/08
B82Y 99/00
B82Y 40/00

US Classification:

423448, 20415761, 422186, 977842, 977734

Abstract:

Graphene production using a continuous or pulsed laser beam focused on a substrate of graphite oxide in a significantly inert environment is disclosed. Laser-induced graphene features are characterized by a 2D-band in the Raman spectra. When the photons of the laser at a various frequencies and power levels beam impinge a graphite oxide foil for various amounts of time, a strip, divet, trench, or hole, having graphene at the bottom or sides is produced. The concentration of the graphite oxide and the laser beam may be adjusted so that the depth of the trench created is a certain depth less than the thickness of the foil. Additionally, in some embodiments, the evaporation of the water during the Hummers method is adjusted so that there remains interlaminar water in the graphite oxide foil. The presently disclosed subject matter may also be used in patterning using rastering or substrate motion.