Kwok P Wong

Address:

175 Eldridge St, New York, NY 10002

Phone:

2122283006

VIN:

2HGFA55507H701573

Make:

HONDA

Model:

CIVIC

Year:

2007

US Patent:

6367412, Apr 9, 2002

Filed:

Feb 17, 2000

Appl. No.:

09/506111

Inventors:

Kartik Ramaswamy - Santa Clara CA
Kwok Manus Wong - San Jose CA
Ashish Bhatnagar - Sunnyvale CA
Mehran Moalem - Cupertino CA
Tony S. Kaushal - Cupertino CA
Shamouil Shamouilian - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723I, 118723 ME, 118723 ER, 156345, 55286

Abstract:

A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

US Patent:

6391146, May 21, 2002

Filed:

Apr 11, 2000

Appl. No.:

09/547423

Inventors:

Ashish Bhatnagar - San Jose CA
Kartik Ramaswamy - Santa Clara CA
Tony S. Kaushal - Cupertino CA
Kwok Manus Wong - San Jose CA
Shamouil Shamouilian - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 100

US Classification:

156345, 118715, 118723 R, 118723 E, 118723 I, 118723 MW

Abstract:

An apparatus and method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor with an erosion resistant inner surface. Optionally, an additive gas source may be provided to introduce additive gas into the gas energizing reactor. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.

US Patent:

6478924, Nov 12, 2002

Filed:

Mar 7, 2000

Appl. No.:

09/513992

Inventors:

Shamouil Shamouilian - San Jose CA
Arnold Kholodenko - San Francisco CA
Kwok Manus Wong - San Jose CA
Alexander M. Veytser - Mountain View CA
Dennis S. Grimard - Ann Arbor MI

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 100

US Classification:

15634548, 15634551, 118723 I, 118728, 361234, 279128

Abstract:

A process chamber capable of processing a substrate in a plasma comprises a dielectric covering a first electrode and a second electrode , a conductor supporting the dielectric , and a voltage supply to supply an RF voltage to the first electrode or the second electrode in the dielectric. The first electrode capacitively couples with a process electrode to energize process gas in the process chamber and RF voltage applied to the second electrode is capacitively coupled to the conductor and through a collar or the second electrode is directly capacitively coupled through the collar.

US Patent:

6494958, Dec 17, 2002

Filed:

Jun 29, 2000

Appl. No.:

09/607100

Inventors:

Shamouil Shamouilian - San Jose CA
Jon M. McChesney - San Ramon CA
Kwok Manus Wong - San Jose CA
Alexander M. Veytser - Mountain View CA
Dennis S. Grimard - Ann Arbor MI

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118723 E, 118723 I, 15634551, 15634548, 15634543

Abstract:

A process chamber capable of processing a substrate in a plasma of process gas. The chamber comprises a support having a dielectric covering an electrode and a conductor below the electrode. A voltage supply supplies a gas energizing voltage to the conductor , and the conductor is adapted to capacitively couple the voltage to the electrode to energize the process gas. Alternatively, the voltage may be supplied to the electrode through a connector which can capacitively couple with the conductor. A DC power supply may also provide an electrostatic chucking voltage to the electrode. In one version, the conductor comprises an interposer.

US Patent:

6642489, Nov 4, 2003

Filed:

Jan 9, 2001

Appl. No.:

09/758000

Inventors:

Kartik Ramaswamy - Santa Clara CA
Dennis S. Grimard - Ann Arbor MI
Philip M. Salzman - San Jose CA
Kwok Manus Wong - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 610

US Classification:

219634, 219635, 118724, 118725

Abstract:

A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

US Patent:

6673323, Jan 6, 2004

Filed:

Mar 24, 2000

Appl. No.:

09/535461

Inventors:

Ashish Bhatnagar - San Jose CA
Tony S. Kaushal - Cupertino CA
Kwok Manus Wong - San Jose CA
Shamouil Shamouilian - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B01D 4700

US Classification:

423210, 423240 R, 588212

Abstract:

A method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor and an additive gas source. Additive gas comprising reactive gas is introduced into the effluent from the process chamber in a volumetric flow rate in relation to the hazardous gas content in the effluent.

US Patent:

6726804, Apr 27, 2004

Filed:

Jan 22, 2001

Appl. No.:

09/767282

Inventors:

Kwok M. Wong - San Jose CA 95129
Shamouil Shamouilian - San Jose CA 95120
Kartik Ramaswamy - Santa Clara CA 95051

International Classification:

H05H 100

US Classification:

15634544, 15634543, 15634547, 15634548, 118723 E, 118723 I

Abstract:

A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

US Patent:

6759624, Jul 6, 2004

Filed:

May 7, 2002

Appl. No.:

10/141025

Inventors:

Ananda H. Kumar - Fremont CA 94539
Tetsuya Ishikawa - Saratoga CA 95070
Kwok Manus Wong - San Jose CA 95129
Farahmand E. Askarinam - Sunnyvale CA 94087

International Classification:

B23K 900

US Classification:

21912136, 219270

Abstract:

A vacuum chamber, such as a semiconductor wafer plasma processing chamber, is heated by use of a ceramic igniter array consisting of a plurality of ceramic igniters positioned in a substrate.