Kyle E Brown

US Patent:

7433047, Oct 7, 2008

Filed:

Feb 16, 2007

Appl. No.:

11/675947

Inventors:

David R. Peale - San Diego CA, US
Dieter E. Mueller - Cupertino CA, US
Kyle A. Brown - San Diego CA, US

Assignee:

KLA-Tencor Corporation - San Jose CA

International Classification:

G01B 11/02

US Classification:

356498

Abstract:

Runout characterization is performed on a moving body by positioning a light source and optical sensor at a nominal distance from the moving body, with a beam directed from the light source against a surface of the moving body. The reflected light is detected at a sampling rate with the optical sensor as the moving body moves, and a data stream of the measurements over time is stored. In the case where an interferometer is used as the optical sensor, relative distance measurements are made. The data stream is analyzed to detect repeating signatures in the data stream, where the signatures represent features on the surface of the moving body. At least one of the features is selected as a reference, and the data stream is processed into segments based on the reference, where each segment represents one period of motion of the moving body. The data segments are overlaid on top of each other to produce ordered sets of data points within the segments. Each ordered set of data points is individually averaged and reported as repeatable runout.

US Patent:

7462814, Dec 9, 2008

Filed:

Feb 1, 2006

Appl. No.:

11/345145

Inventors:

Suresh Lakkapragada - Sunnyvale CA, US
Kyle A. Brown - San Diego CA, US
Matt Hankinson - San Jose CA, US
Ady Levy - Sunnyvale CA, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G06M 7/00
H01J 40/14

US Classification:

250221, 2505593, 25055933, 2505594, 250548, 25055944, 356400, 356401, 3562372, 3562375, 356947, 382144, 382145, 382151, 382153, 414935

Abstract:

Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

US Patent:

7751046, Jul 6, 2010

Filed:

Mar 27, 2003

Appl. No.:

10/401242

Inventors:

Ady Levy - Sunnyvale CA, US
Kyle A. Brown - San Diego CA, US
Rodney Smedt - Los Gatos CA, US
Gary Bultman - Los Altos CA, US
Mehrdad Nikoonahad - Menlo Park CA, US
Dan Wack - Los Altos CA, US
John Fielden - Los Altos CA, US
Ibrahim Abdulhalim - Kfar Manda, IL

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01B 11/00
G01N 21/00
G01B 11/30
G01B 11/14
G01B 11/02

US Classification:

356401, 3562371, 3562375, 356601, 356625, 356635, 356636

Abstract:

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

US Patent:

7767956, Aug 3, 2010

Filed:

Dec 4, 2008

Appl. No.:

12/328123

Inventors:

Suresh Lakkapragada - Santa Clara CA, US
Kyle A. Brown - San Diego CA, US
Matt Hankinson - San Jose CA, US
Ady Levy - Sunnyvale CA, US

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G06M 7/00
H01J 40/14

US Classification:

250221, 2505593, 25055933, 2505594, 250548, 25055944, 356400, 356401, 3562372, 3562375, 356947, 382144, 382145, 382151, 382153, 414935

Abstract:

Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

US Patent:

8179530, May 15, 2012

Filed:

Jul 5, 2010

Appl. No.:

12/830408

Inventors:

Ady Levy - Sunnyvale CA, US
Kyle A. Brown - San Diego CA, US
Rodney Smedt - Los Gatos CA, US
Gary Bultman - Los Altos CA, US
Mehrdad Nikoonahad - Menlo Park CA, US
Dan Wack - Los Altos CA, US
John Fielden - Los Altos CA, US
Ibrahim Abdul-Halim - Kfar Manda, IL

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01B 11/00
G01B 11/30
G01B 11/14
G01B 11/28

US Classification:

356401, 356601, 356625, 356630

Abstract:

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

US Patent:

8502979, Aug 6, 2013

Filed:

May 9, 2012

Appl. No.:

13/467042

Inventors:

Ady Levy - Sunnyvale CA, US
Kyle A. Brown - San Diego CA, US
Rodney Smedt - Los Gatos CA, US
Gary Bultman - Los Altos CA, US
Mehrdad Nikoonahad - Menlo Park CA, US
Dan Wack - Los Altos CA, US
John Fielden - Los Altos CA, US
Ibrahim Abdul-Halim - Kfar Manda, IL

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01B 11/00
G01B 11/30
G01B 11/14
G01B 11/28

US Classification:

356401, 356601, 356625, 356630

Abstract:

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

US Patent:

20040005507, Jan 8, 2004

Filed:

Mar 27, 2003

Appl. No.:

10/401509

Inventors:

Suresh Lakkapragada - Santa Clara CA, US
Kyle Brown - San Diego CA, US
Matt Hankinson - San Jose CA, US
Ady Levy - Sunnyvale CA, US
Ibrahim Abdul-Halim - Kfar Manda, IL

Assignee:

KLA-Tencor, Inc.

International Classification:

G03F007/16
G03B027/32
G03B027/52
C23F001/00
G03F007/40
G03F007/207
H01L021/306
G03F009/00

US Classification:

430/030000, 430/311000, 430/330000, 430/313000, 430/315000, 355/027000, 355/055000, 156/345130, 156/345260, 430/022000

Abstract:

Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

US Patent:

20130314710, Nov 28, 2013

Filed:

Aug 5, 2013

Appl. No.:

13/959621

Inventors:

Kyle A. Brown - San Diego CA, US
Rodney Smedt - Los Gatos CA, US
Gary Bultman - Los Altos CA, US
Mehrdad Nikoonahad - Menlo Park CA, US
Dan Wack - Los Altos CA, US
John Fielden - Los Altos CA, US
Ibrahim Abdul-Halim - Kfar Manda, IL

Assignee:

KLA-TENCOR TECHNOLOGIES CORPORATION - Milpitas CA

International Classification:

G01N 21/27

US Classification:

356402

Abstract:

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.