Lahcene Smati from 1832 Ambridge Dr, Roseville, CA 95747, age 56

Lahcene Smati Phones & Addresses

1832 Ambridge Dr, Roseville, CA 95747
Santa Clara, CA
San Jose, CA

Work

Company:

Telefunken semiconductors
Jan 2013
Position:

Senior process engineer

Education

Degree:

MS
School / High School:

San Jose State University
2003 to 2006
Specialities:

Chemical Engineering

Skills

Cvd • Thin Films • Design of Experiments • Pvd • Spc • Metrology • Pecvd • Semiconductor Industry • R&D • Mems • Semiconductors • Substrates • Rtp • Process Optimization • Plasma Enhanced Chemical Vapor Deposition • Ic • Process Transfer • Fmea • Chemical Vapor Deposition • Jmp • Physical Vapor Deposition • Engineering Management • Statistical Process Control • Microfabrication • Research and Development • Problem Solving • Teamwork

Industries

Semiconductors

Resumes

Staff Engineer

view source

Location:

Roseville, CA

Industry:

Semiconductors

Work:

Telefunken Semiconductors since Jan 2013
Senior Process Engineer
SVTC Technologies Mar 2007 - Oct 2012
Staff Engineer
Cypress Semiconductor 2005 - 2007
Process Engineer
University Ferhat Abbas - Setif, Algeria 1998 - 2000
Assistant Lecturer
AMIA - Algeria 1997 - 1998
Chemistry Teacher

Education:

San Jose State University 2003 - 2006
MS, Chemical Engineering Université Ferhat Abbas, Sétif 1992 - 1996
MS, Industrial Chemistry

Skills:

Cvd
Thin Films
Design of Experiments
Pvd
Spc
Metrology
Pecvd
Semiconductor Industry
R&D
Mems
Semiconductors
Substrates
Rtp
Process Optimization
Plasma Enhanced Chemical Vapor Deposition
Ic
Process Transfer
Fmea
Chemical Vapor Deposition
Jmp
Physical Vapor Deposition
Engineering Management
Statistical Process Control
Microfabrication
Research and Development
Problem Solving
Teamwork

Us Patents

Copper-Free Semiconductor Device Interface And Methods Of Fabrication And Use Thereof
view source
US Patent:

20080308937, Dec 18, 2008
Filed:

Jun 13, 2008
Appl. No.:

12/138595
Inventors:

Wilbur Catabay - Saratoga CA, US
Julian Searle - Ripon CA, US
Wei-Jen Hsia - Saratoga CA, US
Milan Prejda - San Jose CA, US
Rohini Ranganathan - San Jose CA, US
Lahcene Smati - San Jose CA, US
Majid Milani - San Jose CA, US
Assignee:

SVTC TECHNOLOGIES, LLC - San Jose CA
International Classification:

H01L 23/52
H01L 21/4763
US Classification:

257751, 438627, 257E23141, 257E21495
Abstract:

Embodiments of copper-free semiconductor device interfaces and methods for forming and/or utilizing the same are provided herein. In some embodiments, a semiconductor structure may include a substrate having an exposed copper-containing feature; and a copper-free interface disposed over the substrate and providing a conductive interconnect between the copper-containing feature and an upper surface of the copper-free interface to facilitate electrical coupling of the substrate to a semiconductor device while physically isolating the semiconductor device from the copper-containing feature.

Lahcene Smati