Lane T Martin

US Patent:

20110133601, Jun 9, 2011

Filed:

Oct 29, 2010

Appl. No.:

12/916209

Inventors:

Robert J. Zeches - San Francisco CA, US
Lane W. Martin - Champaign IL, US
Ramamoorthy Ramesh - Moraga CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 41/02
H01L 41/00
H01L 41/24

US Classification:

310313 R, 310367, 310311, 264449, 427100

Abstract:

The present invention provides for a composition comprising a thin film of BiFeOhaving a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeOthin film, and a second electrode in contact with the BiFeOthin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

US Patent:

20110308580, Dec 22, 2011

Filed:

Jan 7, 2011

Appl. No.:

12/930507

Inventors:

Jan Seidel - Oakland CA, US
Ramamoorthy Ramesh - Moraga CA, US
Lane Martin - Champaign IL, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 31/02
G11B 5/65

US Classification:

136252, 4288361

Abstract:

Ferroic materials and methods for diverse applications including nanoscale memory, logic and photovoltaic devices are described. In one aspect, ferroic thin films including insulating domains separated by conducting domain walls are provided, with both the insulating domains and conducting domain walls intrinsic to the ferroic thin films. The walls are on the order of about 2 nm wide, providing virtually two dimensional conducting sheets through the insulating material. Also provided are methods of writing, reading, erasing and manipulating conducting domain walls. According to various embodiments, logic and memory devices having conducting domain walls as nanoscale features are provided. In another aspect, ferroic thin films having photovoltaic activity are provided. According to various embodiments, photovoltaic and optoelectronic devices are provided.