Larry Ray Lane

US Patent:

6607982, Aug 19, 2003

Filed:

Mar 23, 2001

Appl. No.:

09/816847

Inventors:

Ronald A. Powell - San Carlos CA
Sridhar K. Kailasam - Santa Clara CA
E. Derryck Settles - Franklin MA
Larry R. Lane - San Jose CA

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 2144

US Classification:

438687, 438627, 438652, 438653, 438643, 438618

Abstract:

The present invention pertains to systems and methods for simultaneously producing a diffusion barrier and a seed layer used in integrated circuit metallization. This is achieved by initially depositing copper-magnesium (CuâMg) alloys with relatively high levels of Mg ( 10 atomic %, which is equivalent to about 4 weight %). After the alloys are deposited, they self-form a magnesium oxide (MgO) based barrier layer at the substrate interface, thus eliminating the need for a separate operation for barrier deposition. The migration of Mg to the substrate interface leaves the remainder of the film relatively pure Cu.

US Patent:

47965622, Jan 10, 1989

Filed:

Jan 15, 1987

Appl. No.:

7/003516

Inventors:

Daniel L. Brors - Fremont CA
Larry R. Lane - San Jose CA
Mark W. Goldsborough - Santa Clara CA
Jason M. Samsel - Milpitas CA
Max van Mastrigt - San Jose CA
Robert Foster - San Francisco CA

Assignee:

Varian Associates, Inc. - Palo Alto CA

International Classification:

C23C 1648
F27D 1100

US Classification:

118725

Abstract:

In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to a temperature in excess of 1000. degree. C. rapidly. The radiant heat source includes cylindrical lamps placed in a radial pattern to improve heating uniformity. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600. degree. C. while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.