Larry W. Lin - Cupertino CA Stuart L. Claassen - Santa Clara CA Chein-Hwa Tsao - Burlingame CA
Assignee:
Xerox Corporation - Stamford CT
International Classification:
G01D 1516
US Classification:
346 11
Abstract:
A method of depositing spots of liquid ink upon selected pixel centers on a substrate having poor ink absorptive properties so as to prevent the flow of liquid ink from one spot to an overlapping adjacent one. The line of information is printed in at least two passes so as to deposit spots of liquid ink on selected pixel centers in a checkerboard pattern wherein only diagonally adjacent pixel areas are deposited in the same pass. On the second pass the complementary checkerboard pattern is deposited. Ink is not deposited on horizontally or vertically adjacent pixel areas during the single pass since the spots on these adjacent areas have overlapping portions.
Traveling Wave Droplet Generator For An Ink Jet Printer
Larry W. Lin - Cupertino CA Joel W. Grover - Pittsford NY Eugene Behun - Rochester NY
Assignee:
Xerox Corporation - Stamford CT
International Classification:
G01D 1518 H01L 4108
US Classification:
346 75
Abstract:
A traveling wave droplet generator for a continuous stream ink jet printer comprising an ink filled tube connected in the vicinity of one end to an ink reservoir. A piezoelectric driver assembly is mounted at the fill end of the tube. The tube has openings connecting to orifices of an aperture plate bonded thereto. The tube has a terminator at the end opposite to the piezoelectric driver to suppress reflection and standing wave formation. The ink streams emitted through the nozzles of the aperture plate are stimulated by the traveling wave causing the streams to break up at predetermined distances from the nozzles.
Chen-Chung Hsu - Taichung, TW Tsun-Tsai Chang - Hsin-Chu, TW Larry Lin - Cupertino CA
Assignee:
United Microelectronics Corporation - Hsin-Chu
International Classification:
H01L 2170
US Classification:
437 60
Abstract:
A shield structure is formed over each of the undoped or lightly doped polysilicon load devices of a 4T SRAM cell. The shield structure may be a metal such as aluminum, titanium or tungsten and serves to protect the undoped or lightly doped resistor within a polysilicon load device from charge-induced damage during ion implantation or plasma processing steps performed on the SRAM after formation of the polysilicon load device. The polysilicon load device is defined by depositing a layer of photoresist, exposing the photoresist through a master load mask, etching, and implanting into the exposed polysilicon. After the load device is formed, a dielectric layer is deposited and then a layer of conductive material is deposited. Dummy conductor structures are formed from the layer of conductive material using photolithography and the master load mask.
GlaxoSmithKline - Shanghai City, China since Mar 2013
Head of Worldwide BD China
Johnson & Johnson - Shanghai May 2011 - Mar 2013
Director of Open Innovation, Asia Pacific
Amgen Inc. - Greater Los Angeles Area 2002 - Apr 2011
Director of Licensing
Immunex - Greater Seattle Area 2001 - 2002
Director of Business Development
Abbott - Greater Chicago Area 1999 - 2001
Senior Manager of Business Development
Education:
Massachusetts Institute of Technology - Sloan School of Management 1995 - 1997
Yale University School of Medicine 1987 - 1992
Dr. Lin graduated from the Medical College of Wisconsin School of Medicine in 1992. He works in Abilene, TX and specializes in Cardiovascular Disease. Dr. Lin is affiliated with Hendrick Medical Center.