Larry Guang-Yih Lin

US Patent:

47484535, May 31, 1988

Filed:

Jul 21, 1987

Appl. No.:

7/076088

Inventors:

Larry W. Lin - Cupertino CA
Stuart L. Claassen - Santa Clara CA
Chein-Hwa Tsao - Burlingame CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01D 1516

US Classification:

346 11

Abstract:

A method of depositing spots of liquid ink upon selected pixel centers on a substrate having poor ink absorptive properties so as to prevent the flow of liquid ink from one spot to an overlapping adjacent one. The line of information is printed in at least two passes so as to deposit spots of liquid ink on selected pixel centers in a checkerboard pattern wherein only diagonally adjacent pixel areas are deposited in the same pass. On the second pass the complementary checkerboard pattern is deposited. Ink is not deposited on horizontally or vertically adjacent pixel areas during the single pass since the spots on these adjacent areas have overlapping portions.

US Patent:

47469293, May 24, 1988

Filed:

Jan 16, 1987

Appl. No.:

7/004017

Inventors:

Larry W. Lin - Cupertino CA
Joel W. Grover - Pittsford NY
Eugene Behun - Rochester NY

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01D 1518
H01L 4108

US Classification:

346 75

Abstract:

A traveling wave droplet generator for a continuous stream ink jet printer comprising an ink filled tube connected in the vicinity of one end to an ink reservoir. A piezoelectric driver assembly is mounted at the fill end of the tube. The tube has openings connecting to orifices of an aperture plate bonded thereto. The tube has a terminator at the end opposite to the piezoelectric driver to suppress reflection and standing wave formation. The ink streams emitted through the nozzles of the aperture plate are stimulated by the traveling wave causing the streams to break up at predetermined distances from the nozzles.

US Patent:

57007110, Dec 23, 1997

Filed:

Oct 22, 1996

Appl. No.:

8/735222

Inventors:

Chen-Chung Hsu - Taichung, TW
Tsun-Tsai Chang - Hsin-Chu, TW
Larry Lin - Cupertino CA

Assignee:

United Microelectronics Corporation - Hsin-Chu

International Classification:

H01L 2170

US Classification:

437 60

Abstract:

A shield structure is formed over each of the undoped or lightly doped polysilicon load devices of a 4T SRAM cell. The shield structure may be a metal such as aluminum, titanium or tungsten and serves to protect the undoped or lightly doped resistor within a polysilicon load device from charge-induced damage during ion implantation or plasma processing steps performed on the SRAM after formation of the polysilicon load device. The polysilicon load device is defined by depositing a layer of photoresist, exposing the photoresist through a master load mask, etching, and implanting into the exposed polysilicon. After the load device is formed, a dielectric layer is deposited and then a layer of conductive material is deposited. Dummy conductor structures are formed from the layer of conductive material using photolithography and the master load mask.