Larry C Olsen

US Patent:

7834263, Nov 16, 2010

Filed:

Dec 2, 2003

Appl. No.:

10/727062

Inventors:

John G. DeSteese - Kennewick WA, US
Larry C. Olsen - Kennewick WA, US

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

H01L 35/30

US Classification:

136205, 136225

Abstract:

A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein the first side is in communication with a means for transmitting ambient thermal energy collected or rejected in the first temperature region and the second side is in communication with the second temperature region thereby producing a temperature gradient across the thermoelectric device and in turn generating an electrical current.

US Patent:

7851691, Dec 14, 2010

Filed:

Sep 28, 2007

Appl. No.:

11/864595

Inventors:

John G. DeSteese - Kennewick WA, US
Larry C. Olsen - Richland WA, US
Peter M. Martin - Kennewick WA, US

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

H01L 35/30
H01L 35/34
C23C 14/34

US Classification:

136201, 136205, 136238, 136239, 136240, 136241, 20419214, 20419215, 20419225

Abstract:

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

US Patent:

8455751, Jun 4, 2013

Filed:

Dec 2, 2003

Appl. No.:

10/726744

Inventors:

Larry C. Olsen - Richland WA, US
Peter M. Martin - Kennewick WA, US
John W. Johnston - Yakima WA, US
John G. DeSteese - Kennewick WA, US

Assignee:

Battelle Memorial Institute - Richland WA

International Classification:

H01L 35/16
H01L 35/12
H01L 35/20
H01L 35/28

US Classification:

136240, 1362361, 136225

Abstract:

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

US Patent:

8487507, Jul 16, 2013

Filed:

Dec 14, 2009

Appl. No.:

12/637735

Inventors:

Peter Cabauy - Miami FL, US
Larry C. Olsen - Kennewick WA, US
Noren Pan - Wilmette IL, US

International Classification:

G21H 1/06

US Classification:

310303, 310301

Abstract:

A multilayer device for producing electricity. The device comprising a betavoltaic source layer for generating beta particles, and at least three semiconductor layers each having a bandgap substantially similar to a band gap of the other layers, the at least three layers comprising a doped top layer, an undoped intermediate layer and a doped bottom layer, wherein the top and the bottom layers are doped with opposite-type dopants, and wherein the top layer is closer to the betavoltaic source layer than the bottom layer.

US Patent:

20050139250, Jun 30, 2005

Filed:

Dec 2, 2004

Appl. No.:

11/004611

Inventors:

John DeSteese - Kennewick WA, US
Larry Olsen - Richland WA, US
John Johnston - Yakima WA, US
Peter Martin - Kennewick WA, US
Timothy Peters - Richland WA, US

International Classification:

H01L035/20
H01L035/14
H01L035/28

US Classification:

136212000

Abstract:

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

US Patent:

20060032525, Feb 16, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917813

Inventors:

Larry Olsen - Richland WA, US
Peter Martin - Kennewick WA, US

International Classification:

H01L 35/28
H01L 23/38

US Classification:

136203000, 136205000, 257930000

Abstract:

A p-type semiconductor material with enhanced thermoelectric and electric properties comprising alternating thin films of boron carbide having a dopant selected from the group of Ge and Si. Alternating layers of boron carbide are of the general form BCwith BC and BC being preferred. Layers are formed by sputter depositing. The dopant is provided in the layers by co-sputtering the dopant with the boron carbide. Alternatively, the dopant may be provided by diffusing the dopant into the deposited boron carbide layers. Layers are formed on a substrate that is heated to a temperature of between about 400 C. and about 600 C. The alternating layers of boron carbide are heat treated at a temperature of about 900 C.-1000 C. for a period of about 1 hour to form a polycrystalline structure.

US Patent:

20070125413, Jun 7, 2007

Filed:

Dec 2, 2004

Appl. No.:

10/581281

Inventors:

Larry Olsen - Richland WA, US
John DeSteese - Kennewick WA, US
Peter Martin - Kennewick WA, US
John Johnston - Yakima WA, US
Timothy Peters - Richland WA, US

International Classification:

H01L 35/30

US Classification:

136205000

Abstract:

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

US Patent:

20090084421, Apr 2, 2009

Filed:

Sep 28, 2007

Appl. No.:

11/864877

Inventors:

Larry C. Olsen - Richland WA, US
John G. DeSteese - Kennewick WA, US

International Classification:

H01L 35/02
H01L 35/34
C23C 14/34

US Classification:

136201, 136200, 20419212, 20419225

Abstract:

One or more thin-film layers of thermoelectric material are formed on one or both sides of a substrate (e.g., a flexible substrate). In some embodiments, the thin-film layers have features that scatter phonons. A flexible substrate and its attached layers of thermoelectric material can be rolled up and/or arranged in a serpentine configuration for incorporation into a thermoelectric power source. In some embodiments, thin-film layers on one side of a substrate form a single, continuous thermoelectric element. In particular embodiments, one or more thin-film layers are fabricated on a substrate using an arrangement where the substrate is wrapped around a wheel and rotated one or more times past a sputtering device or other device for depositing material.