Larry M Thompson

US Patent:

42082110, Jun 17, 1980

Filed:

May 23, 1978

Appl. No.:

5/908791

Inventors:

Murrae J. S. Bowden - Summit NJ
Eugene D. Feit - Berkeley Heights NJ
Larry F. Thompson - Gillette NJ
Cletus W. Wilkins - Plainfield NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G03C 500

US Classification:

430314

Abstract:

Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u. v. may be used.

US Patent:

42620813, Apr 14, 1981

Filed:

Nov 21, 1979

Appl. No.:

6/096435

Inventors:

Murrae J. S. Bowden - Summit NJ
Eugene D. Feit - Berkeley Heights NJ
Larry F. Thompson - Gillette NJ
Cletus W. Wilkins - Plainfield NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G03C 168
G03C 500

US Classification:

430280

Abstract:

Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u. v. may be used.

US Patent:

49351761, Jun 19, 1990

Filed:

Dec 9, 1988

Appl. No.:

7/282135

Inventors:

Roger M. Brock - Carrollton GA
Paul E. Large - Carrollton GA
Larry J. Thompson - Carrollton GA

Assignee:

Southwire Company - Carrollton GA

International Classification:

B29C 4706
B29C 4792

US Classification:

264 402

Abstract:

The present invention incorporates a conductor contact apparatus, a conductor defect detector, and a relay or equivalent added to the emergency stop circuit of a conductor insulation extruder apparatus in order to detect conductor defects and shut-down the extrusion apparatus before the conductor defect can cause the extruder to become blocked, interrupting normal production operations. The defect detector is especially adapted to detect variations in the cross-sectional area (or apparent cross-sectional area) of a conductor being insulated.

US Patent:

42898455, Sep 15, 1981

Filed:

May 22, 1978

Appl. No.:

5/907873

Inventors:

Murrae J. S. Bowden - Summit NJ
Larry F. Thompson - Gillette NJ

Assignee:

Bell Telephone Laboratories, Inc. - Murray Hill NJ

International Classification:

G03C 500

US Classification:

430296

Abstract:

A phase compatibile polymer blend serves as a radiation sensitive lithographic resist in the fabrication of circuits and circuit elements. Radiation sensitivity is due to inclusion of a "modifier". Resist properties, notably stability to agents and ambients to be masked are attributed largely to a second component, the "matrix polymer". In an exemplary embodiment in which the blend is positive acting, fabrication including dry processing is dependent upon use of a resist blend of a vapor developing polysulfone and a novolac. The novolac, inherently soluble in alkaline media is rendered insoluble in the blend. Radiation initiated depolymerization results in volatilization of the modifier to render the irradiated portions of the resist soluble in alkaline developers. Modifier may function in other manner; for example, it may undergo radiation initiated polymerization so as to insolubilize the blend in irradiated regions, so resulting in a negative acting resist. Effective isolation of lithographic from masking functions permits design of blends with high lithographic sensitivity, as well as good processing stability.