Lawrence A Flannery

Address:

10890 W Hershey Ln, Dexter, MI 48130

VIN:

3FAHP0KC9AR327641

Make:

FORD

Model:

FUSION

Year:

2010

US Patent:

20110159668, Jun 30, 2011

Filed:

Dec 17, 2010

Appl. No.:

12/971788

Inventors:

Swapnil Y. Dhumal - Brentwood MO, US
Lawrence P. Flannery - Warrenton MO, US
Thomas A. Torack - Oakland MO, US
John A. Pitney - St. Peters MO, US

Assignee:

MEMC ELECTRONIC MATERIALS, INC. - St. Peters MO

International Classification:

H01L 21/20

US Classification:

438479, 438458, 257E2109

Abstract:

Methods are provided for etching and/or depositing an epitaxial layer on a silicon-on-insulator structure comprising a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The cleaved surface of wafer is then etched while controlling a temperature of the reactor such that the etching reaction is kinetically limited. An epitaxial layer is then deposited on the wafer while controlling the temperature of the reactor such that a rate of deposition on the cleaved surface is kinetically limited.