Lawrence A Goodman

US Patent:

41205677, Oct 17, 1978

Filed:

Feb 11, 1977

Appl. No.:

5/767957

Inventors:

Lawrence Alan Goodman - East Windsor NJ
Aaron William Levine - Lawrenceville NJ
Dietrich Meyerhofer - Princeton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

C09K 334
G02F 113

US Classification:

350350

Abstract:

Liquid crystal mixtures of liquid crystalline esters, biphenyls and terphenyls have wide useful temperature ranges, fast response times and a small index of refraction anisotropy which can be employed in liquid crystal cells having improved viewing angles.

US Patent:

42042178, May 20, 1980

Filed:

Jul 19, 1978

Appl. No.:

5/926014

Inventors:

Lawrence A. Goodman - East Windsor NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2978
H01L 4902
G02F 113

US Classification:

357 23

Abstract:

A transistor comprises two spaced apart electrodes, a body of semiconductor material between and in contact with the two electrodes, a layer of liquid crystal material in contact with and on said semiconductor body, and a third electrode in contact with the layer of liquid crystal material. Integrated optologic devices are made from these liquid crystal transistors.

US Patent:

59587938, Sep 28, 1999

Filed:

Dec 24, 1997

Appl. No.:

8/998353

Inventors:

Vipulkumar K. Patel - South Brunswick NJ
Lawrence K. White - Princeton Jct. NJ
Lawrence A. Goodman - Plainsboro NJ

Assignee:

Sarnoff Corporation - Princeton NJ

International Classification:

H01L 213065
H01L 21314
H01L 21316
H01L 21318

US Classification:

438689

Abstract:

A method of etching an opening having tapered wall in a layer of silicon carbide (SiC) includes forming a layer of a resist on the SiC layer. An opening having tapered wall is formed in the resist layer so as to expose a portion of the SiC layer. The exposed portion of the SiC layer is then exposed to a plasma of a gas containing carbon and fluorine to etch an opening through the SiC layer with the opening having tapered walls. If a layer of a glass is provided under the SiC layer, the plasma will also etch through the glass layer to provide an opening in the glass layer having tapered walls.

US Patent:

40945820, Jun 13, 1978

Filed:

Oct 18, 1976

Appl. No.:

5/733168

Inventors:

Lawrence Alan Goodman - East Windsor NJ

Assignee:

RCA Corporation - New York NY

International Classification:

G02F 116
G08B 2300
H03K 1760
H01L 2978

US Classification:

350333

Abstract:

A field-effect transistor, made with liquid crystal material, is connected to each liquid crystal cell in a liquid crystal matrix display device. The transistors with the display, all made with liquid crystal material, are integrally constructed in one device.

US Patent:

41263847, Nov 21, 1978

Filed:

Aug 13, 1976

Appl. No.:

5/714121

Inventors:

Lawrence A. Goodman - East Windsor NJ
Kenneth W. Hang - East Windsor NJ
William B. Hall - Stockton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

G02F 113

US Classification:

350345

Abstract:

A liquid crystal device includes a liquid crystal material encapsulated between two glass plates having electrodes on their inner surfaces. An illuminator is provided across the back of the liquid crystal device. The illuminator includes a radioactive material encapsulated between two glass plates. The inner surface of the illuminator plates are coated with a cathodoluminescent phosphor. One of the plates of the illuminator may be one of the plates of the liquid crystal device. The photons from the phosphor of the illuminator illuminate the liquid crystal device.