Lawrence C Wagner

US Patent:

60235772, Feb 8, 2000

Filed:

Sep 26, 1997

Appl. No.:

8/938676

Inventors:

George E. Smith - Wappingers Falls NY
Lawrence F. Wagner - Fishkill NY
Timothy L. Walters - Poughkeepsie NY
Fariborz Assaderaghi - Mahopac NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06G 748

US Classification:

39550035

Abstract:

A method for use in electronic design models encoded into design software for use in SOI based FET logic design includes simulation of an SOI device and setting a floating body voltage to any desired value at any time during the simulation, by adding to the model an ideal voltage source, whose value is a desired body voltage, in series with an ideal current source, whose value is a constant times the voltage across itself. When the constant is zero no current can flow, and any additional components have no effect on the circuit. When the constant is non-zero, said ideal current source appears to be the same as a resistor such that, current can flow in to or out from the body node, setting its voltage. The constant is kept zero at all times, except when it is desired to change the body voltage. The body voltage can be reset at any time to solve the problem of successive delays in one simulation run and resetting the voltage before each delay measurement starts.

US Patent:

53410238, Aug 23, 1994

Filed:

Jun 18, 1992

Appl. No.:

7/900881

Inventors:

Chang-Ming Hsieh - Fishkill NY
Louis L. C. Hsu - Fishkill NY
Ronald W. Knepper - LaGrangeville NY
Lawrence F. Wagner - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2972

US Classification:

257559

Abstract:

A lateral bipolar transistor has an extrinsic base layer on either side of a centrally disposed emitter layer and an intrinsic base and a collector oriented perpendicularly to the extrinsic base and collector layers.

US Patent:

53710223, Dec 6, 1994

Filed:

Feb 28, 1994

Appl. No.:

8/203129

Inventors:

Chang-Ming Hsieh - Fishkill NY
Louis L. G. Hsu - Fishkill NY
Ronald W. Knepper - LaGrangeville NY
Lawrence F. Wagner - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21265

US Classification:

437 32

Abstract:

A transistor with silicon on insulator (SOI) intrinsic base and a collector each formed by a low temperature epitaxial process and each orientated vertically with respect to the (SOI) substrate. The base width can be as narrow as in a conventional vertical transistor. Similarly, the collector width can be precisely controlled.

US Patent:

61416320, Oct 31, 2000

Filed:

Sep 2, 1999

Appl. No.:

9/388594

Inventors:

George E. Smith - Wappingers Falls NY
Fariborz Assaderaghi - Mahopac NY
Paul D. Muench - Poughkeepsie NY
Lawrence F. Wagner - Fishkill NY
Timothy L. Walters - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06G 748

US Classification:

703 14

Abstract:

A method for use in electronic design models encoded into design software for use in SOI based FET logic design includes simulation of an SOI device by and setting a floating body voltage to any desired value at any time during the simulation, by adding to the model an ideal voltage source, whose value is a desired body voltage, in series with an ideal current source, whose value is a constant times the voltage across itself. When the constant is zero, no current can flow, and any additional components have no effect on the circuit. When the constant is non-zero, said ideal current source appears to be the same as a resistor such that current can flow in to or out from the body node, setting its voltage. The constant is kept zero at all times, except when it is desired to change the body voltage. The body voltage can be reset at any time to solve the problem of successive delays in one simulation run and resetting the voltage before each delay measurement starts.

US Patent:

54463122, Aug 29, 1995

Filed:

Jun 24, 1994

Appl. No.:

8/264885

Inventors:

Chang-Ming Hsieh - Fishkill NY
Louis L. G. Hsu - Fishkill NY
Ronald W. Knepper - LaGrangeville NY
Lawrence F. Wagner - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2970

US Classification:

257559

Abstract:

A transistor with silicon on insulator (SOI) intrinsic base and a collector each formed by a low temperature epitaxial process and each orientated vertically with respect to the (SOI) substrate. The base width can be as narrow as in a conventional vertical transistor. Similarly, the collector width can be precisely controlled.

US Patent:

52586405, Nov 2, 1993

Filed:

Sep 2, 1992

Appl. No.:

7/939214

Inventors:

Chang-Ming Hsieh - Fishkill NY
Louis L. Hsu - Fishkill NY
Phung T. Nguyen - Poughkeepsie NY
Lawrence F. Wagner - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2948
H01L 2956

US Classification:

257471

Abstract:

An integrated gate and semiconductor barrier layer diode which functions as a regular diode when the gate is turned off and as, a Schottky barrier diode with the gate turned on.