Lee J Chen

US Patent:

6512333, Jan 28, 2003

Filed:

Dec 14, 2001

Appl. No.:

10/017730

Inventors:

Lee Chen - Austin TX 78748

International Classification:

H05H 154

US Classification:

31511121, 31511161, 31511171, 315506, 315500, 250251

Abstract:

The RF-powered plasma accelerator/homogenizer produces a quiescent plasma having a generally homogenous preselected plasma potential V and a space-charge neutralized plasma beam. The plasma accelerator/homogenizer includes an RF-conductive accelerator/homogenizer structure ( ) having a plurality of dielectric-coated accelerator/homogenizer surfaces ( ) with total surface area A and a containment assembly that includes an RF-grounded structure ( ) with a total ground surface area A , where A A. The accelerator/homogenizer structure is reactively coupled to an RF source using various approaches for direct or stray capacitive coupling ( ). The RF voltage induced on the accelerator/homogenizer surfaces oscillates around a positive offset voltage determined by (A /A ) , where x is not greater than 4, and causes the surfaces to absorb thermal electrons from the diffusing primary plasma, producing a homogenous quiescent plasma at preselected plasma potential V , which is approximately equal to the positive value of the offset RF voltage.

US Patent:

6809310, Oct 26, 2004

Filed:

Jan 27, 2003

Appl. No.:

10/351816

Inventors:

Lee Chen - Austin TX 78748

International Classification:

H05H 302

US Classification:

250251, 31511181

Abstract:

A beam of accelerated ions ( ) is produced from a quiescent plasma ( ) created by diffusing a heated primary plasma ( ) through an accelerator/homogenizer structure ( ) having a uniform voltage potential V and a total surface area A. The RF-conductive, dielectric coated surfaces of the accelerator/homogenizer structure are quasi-uniformly dispersed throughout the primary plasma. The quiescent plasma has a generally homogenous preselected plasma potential V approximately equal to V. An RF-grounded structure ( ) having a total ground surface area A , wherein A A , attracts ions from the quiescent plasma to produce the accelerated ion beam.

US Patent:

6852584, Feb 8, 2005

Filed:

Jan 14, 2004

Appl. No.:

10/756759

Inventors:

Lee Chen - Austin TX, US
Hongyu Yue - Austin TX, US
Hiromitsu Kambara - Austin TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L021/336

US Classification:

438197, 438267

Abstract:

A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted portion of the gate electrode structure by chemical etching, thereby forming a trimmed gate electrode structure with a second dimension that is smaller than the first dimension. The trimming process can be carried out under process conditions where formation of the reaction layer is substantially self-limiting. The trimming process can be repeated to further reduce the dimension of the gate electrode structure.

US Patent:

7138767, Nov 21, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/953802

Inventors:

Lee Chen - Cedar Creek TX, US
Caiz Hong Tian - Osaka, JP
Naoki Matsumoto - Kofu, JP

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01J 7/24

US Classification:

31511121, 31511101

Abstract:

A SWP source includes an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma. A cover plate coupled to the plasma surface of the EM wave launcher protects the EM wave launcher from the plasma.

US Patent:

7202169, Apr 10, 2007

Filed:

Sep 26, 2003

Appl. No.:

10/670795

Inventors:

Lee Chen - Austin TX, US
Audunn Ludviksson - Scottsdale AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01F 21/302

US Classification:

438689, 438722

Abstract:

A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.

US Patent:

7229563, Jun 12, 2007

Filed:

Jan 28, 2003

Appl. No.:

10/501987

Inventors:

Lee Chen - Cedar Creek TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23F 1/00

US Classification:

216 13, 216 22, 216 67, 216 75, 438710, 438720, 438742

Abstract:

An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via an ion-assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti—Ni metal gates for CMOS applications. Etching of Ni—Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.

US Patent:

7358484, Apr 15, 2008

Filed:

Sep 29, 2005

Appl. No.:

11/238191

Inventors:

Demetre J. Economou - Houston TX, US
Lee Chen - Cedar Creek TX, US
Vincent M. Donnelly - Houston TX, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H05H 3/00

US Classification:

250251

Abstract:

Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.

US Patent:

7396431, Jul 8, 2008

Filed:

Sep 30, 2004

Appl. No.:

10/953801

Inventors:

Lee Chen - Cedar Creek TX, US
Hiromitsu Kambara - Austin TX, US
Caizhong Tian - Osaka, JP
Tetsuya Nishizuka - Kita-ku, JP
Toshihisa Nozawa - Kobe, JP

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

15634533, 118723 MW, 118715, 15634541

Abstract:

A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.